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arXiv 1402.4475physics.opticscond-mat.mes-hall
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双曲型超材料中的强耦合

Strong Coupling in Hyperbolic Metamaterials

Prashant Shekhar, Zubin Jacob

摘要:

纳米尺度的光-物质相互作用在弱耦合制度已经实现了独特的双曲超材料模式拥有高密度的状态。在这里,我们显示了强耦合的多量子阱(MQW)板的子带间跃迁(ISBTs)和双曲型超材料(HMM)的体极化激元模式。这些HMM模式具有大的波矢量(高k模式),并且在常规材料中通常是瞬逝的。我们分析了一种实用的金属-介质多层隐马尔可夫模型结构,该结构由作为金属层的高杂质半导体和有源多量子阱介质板组成。我们观察到离域超材料模式与分布在整个结构中的活性材料的相互作用。强耦合和特征的反交叉与最大拉比分裂(RS)的能量高达52毫电子伏的预测之间的高k模式的HMM和ISBT,一个值约10.5倍大于ISBT线宽和4.5倍大于材料损耗的结构。有源半导体超材料器件中的RS能量的可扩展性和可调谐性在量子阱红外光电探测器和子带间发光器件中具有潜在的应用。

英文摘要:

Nanoscale light-matter interaction in the weak-coupling regime has been achieved with unique hyperbolic metamaterial modes possessing a high density of states. Here, we show strong coupling between intersubband transitions (ISBTs) of a multiple quantum well (MQW) slab and the bulk polariton modes of a hyperbolic metamaterial (HMM). These HMM modes have large wave vectors (high-k modes) and are normally evanescent in conventional materials. We analyze a metal-dielectric practical multilayer HMM structure consisting of a highly doped semiconductor acting as a metallic layer and an active multiple quantum well dielectric slab. We observe delocalized metamaterial mode interaction with the active materials distributed throughout the structure. Strong coupling and characteristic anticrossing with a maximum Rabi splitting (RS) energy of up to 52 meV is predicted between the high-k mode of the HMMand the ISBT, a value approximately 10.5 times greater than the ISBT linewidth and 4.5 times greater than the material loss of the structure. The scalability and tunability of the RS energy in an active semiconductor metamaterial device have potential applications in quantum well infrared photodetectors and intersubband light-emitting devices.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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