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arXiv 1306.6780cond-mat.mes-hall
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增加电极有效接触长度提高光电导THz发射器效率

Improved Efficiency of Photoconductive THz Emitters by Increasing the Effective Contact Length of Electrodes

Abhishek Singh, Harshad Surdi, V. V. Nikesh, S. S. Prabhu, G. H. Döhler

摘要:

研究了半绝缘GaAs(SI-GaAs)基光电导发射极(PCE)中金属电极与半导体衬底界面处的表面改性对太赫兹(THz)辐射发射的影响。在接触沉积之前,我们部分蚀刻出具有不同周期的光栅状图案的500 nm厚的SI-GaAs层。通过在图案化表面上沉积电极,电极遵循光栅周期的轮廓。这增加了PCE上有源区的每单位面积的电极的有效接触长度。与未图案化的表面相比,从图案化的表面发射的THz脉冲的电场幅度的最大值被增强高达大于因子2。我们将这种增加归因于由于表面图案化而导致的电极的有效接触长度的增加。

英文摘要:

We study the effect of a surface modification at the interface between metallic electrodes and semiconducting substrate in Semi-Insulating GaAs (SI-GaAs) based photoconductive emitters (PCE) on the emission of Tera-Hertz (THz) radiation. We partially etch out 500 nm thick layer of SI-GaAs in grating like pattern with various periods before the contact deposition. By depositing the electrodes on the patterned surface, the electrodes follow the contour of the grating period. This increases the effective contact length of the electrodes per unit area of the active regions on the PCE. The maxima of the electric field amplitude of the THz pulses emitted from the patterned surface are enhanced by up to more than a factor 2 as compared to an un-patterned surface. We attribute this increase to the increase of the effective contact length of the electrode due to surface patterning.

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