平行磁场中（001）GaAs电子的各向异性费米轮廓
Anisotropic Fermi Contour of (001) GaAs Electrons in Parallel Magnetic Fields
摘要：
我们证明了一个严重的费米轮廓各向异性诱导的应用程序的平行磁场限制在30 nm宽的（001）GaAs量子阱的高迁移率电子。我们研究的可伸缩性振荡，即几何共振的电子轨道与单向的，表面应变引起的，周期性的电位调制，直接探测的费米轮廓的大小沿和垂直于平行场。它们的面积是由Shubnikov-de Haas振荡得到的。我们的实验数据同意半定量的费米轮廓的无参数计算的结果，但有显着的差异。
英文摘要：
We demonstrate a severe Fermi contour anisotropy induced by the application of a parallel magnetic field to high-mobility electrons confined to a 30-nm-wide (001) GaAs quantum well. We study commensurability oscillations, namely geometrical resonances of the electron orbits with a unidirectional, surface-strain-induced, periodic potential modulation, to directly probe the size of the Fermi contours along and perpendicular to the parallel field. Their areas are obtained from the Shubnikov-de Haas oscillations. Our experimental data agree semi-quantitatively with the results of parameter-free calculations of the Fermi contours but there are significant discrepancies.
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