Classification of interacting electronic topological insulators in three dimensions
Chong Wang, Andrew C. Potter, T. Senthil
备注:
New version contains more results on experimental signatures and a more rigorous proof of a key statement (see Appendix D,E), with references reorganized
A fundamental open problem in condensed matter physics is how the dichotomy between conventional and topological band insulators is modified in the presence of strong electron interactions. We show that there are 6 new electronic topological insulators that have no non-interacting counterpart. Combined with the previously known band-insulators, these produce a total of 8 topologically distinct phases. Two of the new topological insulators have a simple physical description as Mott insulators in which the electron spins form spin analogs of the familiar topological band-insulator. The remaining are obtained as combinations of these two `topological paramagnets' and the topological band insulator. We prove that these 8 phases form a complete list of all possible interacting topological insulators, and are classified by a Z_2^3 group-structure. Experimental signatures are also discussed for these phases.
After briefly recalling the quantum entanglement-based view of topological phases of matter in order to outline the general context, we give an overview of different approaches to the classification problem of topological insulators and superconductors of non-interacting Fermions. In particular, we review in some detail general symmetry aspects of the "ten-fold way" which forms the foundation of the classification, and put different approaches to the classification in relationship with each other. We end by briefly mentioning some of the results obtained on the effect of interactions, mainly i…
We propose a topological order parameter for interacting topological insulators, expressed in terms of the full Green's functions of the interacting system. We show that it is exactly quantized for a time reversal invariant topological insulator, and it can be experimentally measured through the topological magneto-electric effect. This topological order parameter can be applied to both interacting and disordered systems, and used for determining their phase diagrams.
We introduce the topological mirror excitonic insulator as a new type of interacting topological crystalline phase in one dimension. Its mirror-symmetry-protected topological properties are driven by exciton physics, and it manifests in the quantized bulk polarization and half-charge modes on the boundary. And the bosonization analysis is performed to demonstrate its robustness against strong correlation effects in one dimension. Besides, we also show that Rashba nanowires and Dirac semimetal nanowires could provide ideal experimental platforms to realize this new topological mirror excitonic …
We propose general topological order parameters for interacting insulators in terms of the Green's function at zero frequency. They provide an unified description of various interacting topological insulators including the quantum anomalous Hall insulators and the time reversal invariant insulators in four, three and two dimensions. Since only Green's function at zero frequency is used, these topological order parameters can be evaluated efficiently by most numerical and analytical algorithms for strongly interacting systems.
From thermodynamic analysis we demonstrate that during metal-insulator transitions in pure matters, a nonequilibrium homogeneous state may be unstable against charge density modulations with certain wavelengths, and thus evolves to the equilibrium phase through transient electronic phase separation. This phase instability occurs as two inequalities between the first and the second derivatives of the free energy with respect to the order parameter are fulfilled. The dominant wavelength of the modulated phase is also derived. The computer simulation further confirms the theoretical derivation. E…
By combining scanning tunneling microscopy/spectroscopy and first-principles calculations, we systematically study the local electronic states of magnetic dopants V and Cr in the topological insulator (TI) Sb2Te3. Spectroscopic imaging shows diverse local defect states between Cr and V, which agree with our first-principle calculations. The unique spectroscopic features of V and Cr dopants provide electronic fingerprints for the co-doped magnetic TI samples with the enhanced quantum anomalous Hall effect. Our results also facilitate the exploration of the underlying mechanism of the enhanced q…
We investigated the interdependence of the effects of disorder and carrier correlations on the metal-insulator transition in two-dimensional electronic systems. We present a quantitative metal-insulator phase diagram. Depending on the carrier density we find two different types of metal-insulator transition - a continuous localization for rs=<8 and a discontinuous transition at higher rs. The critical level of disorder at the transition decreases with decreasing carrier density. At very low carrier densities we find that the system is always insulating. The value of the conductivity at the tra…
A time-reversal invariant topological insulator can be generally defined by the effective topological field theory with a quantized θcoefficient, which can only take values of 0 or π. This theory is generally valid for an arbitrarily interacting system and the quantization of the θinvariant can be directly measured experimentally. Reduced to the case of a non-interacting system, the θinvariant can be expressed as an integral over the entire three dimensional Brillouin zone. Alternatively, non-interacting insulators can be classified by topological invariants defined over discrete time-reversal…
Electronically phase separated manganite wires are found to exhibit controllable metal-insulator transitions under local electric fields. The switching characteristics are shown to be fully reversible, polarity independent, and highly resistant to thermal breakdown caused by repeated cycling. It is further demonstrated that multiple discrete resistive states can be accessed in a single wire. The results conform to a phenomenological model in which the inherent nanoscale insulating and metallic domains are rearranged through electrophoretic-like processes to open and close percolation channels.
We study the effect of electron interactions in topological crystalline insulators (TCIs) protected by mirror symmetry, which are realized in the SnTe material class and host multi-valley Dirac fermion surface states. We find that interactions reduce the integer classification of noninteracting TCIs in three dimensions, indexed by the mirror Chern number, to a finite group $Z_8$. In particular, we explicitly construct a microscopic interaction Hamiltonian to gap 8 flavors of Dirac fermions on the TCI surface, while preserving the mirror symmetry. Our construction builds on interacting edge sta…
Bloch theory describes the electronic states in crystals whose energies are distributed as bands over the Brillouin zone. The electronic states corresponding to a (few) isolated energy band(s) thus constitute a vector bundle. The topological properties of these vector bundles provide new characteristics of the corresponding electronic phases. We review some of these properties in the case of (topological) insulators and semi-metals.
Motivated by recent progress in crystalline symmetry protected topological (SPT) phases of interacting bosons, we study topological crystalline insulators/superconductors (TCIs) of strongly interacting fermions. We construct a class of intrinsically interacting fermionic TCIs, and show that they are beyond both free-fermion TCIs and bosonic crystalline SPT phases. We also show how these phases can be characterized by symmetry protected gapless fermion modes on the corners/hinges of an open system.
We study a generic model of a Chern insulator supplemented by a Hubbard interaction in arbitrary even dimension $D$ and demonstrate that the model remains well-defined and nontrivial in the $D \to \infty$ limit. Dynamical mean-field theory is applicable and predicts a phase diagram with a continuum of topologically different phases separating a correlated Mott insulator from the trivial band insulator. We discuss various features, such as the elusive distinction between insulating and semi-metal states, which are unconventional already in the non-interacting case. Topological phases are charac…
For interacting Z_2 topological insulators with inversion symmetry, we propose a simple topological invariant expressed in terms of the parity eigenvalues of the interacting Green's function at time-reversal invariant momenta. We derive this result from our previous formula involving the integral over the frequency-momenta space. This formula greatly simplifies the explicit calculation of Z_2 topological invariants in inversion symmetric insulators with strong interactions.
The Bloch wave functions have been playing a crucial role in the diagnosis of topological phases in non-interacting systems. However, the Bloch waves are no longer applicable in the presence of finite Coulomb interaction and alternative approaches are needed to identify the topological indices. In this paper, we focus on three-dimensional higher-order topological insulators protected by $C_4T$ symmetry and show that the topological index can be computed through eigenstates of inverse Green's function at zero frequency. If there is an additional $S_4$ rotoinversion symmetry, the topological ind…
A brief review of metal-insulator transitions in three-dimensional doped semiconductors, with emphasis on the "critical exponent puzzle"; and new experimental findings that signal the possibility of an unexpected metal-insulator transition in dilute two-dimensional systems, such as silicon MOSFETs and GaAs/AlGaAs heterostructures.
Robustness of helical edge states in 2D topological insulators (TI) against strong interactions remains an intriguing issue. Here, by performing the first sign-free quantum Monte Carlo (QMC) simulation of the Kane-Mele-Hubbard-Rashba model which describes an interacting 2D TI with two-particle backscattering on edges, we verify that the gapless helical edge states are robust against a finite range of two-particle backscattering when the Coulomb repulsion is not strong. However, when the Coulomb repulsion is strong enough, the helical edge states can be gapped by infinitesimal two-particle back…
The theory of topological insulators and superconductors has mostly focused on non-interacting and gapped systems. This review article discusses topological phases that are either gapless or interacting. We discuss recent progress in identifying gapless systems with stable topological properties (such as novel surface states), using Weyl semimetals as an illustration. We then review recent progress in describing topological phases of interacting gapped systems. We explain how new types of edge states can be stabilized by interactions and symmetry, even though the bulk has only conventional exc…
We review recent experimental results on the metal-insulator transition and low-density phases in strongly-interacting, low-disordered Si-based two-dimensional electron systems. Special attention is given to the metallic state in ultra-clean SiGe quantum wells and to the evidence for a flat band at the Fermi level and a quantum electron solid.
The organic salt $α$-(BEDT-TTF)$_2$I$_3$ is considered a model system for metal-insulator transition due to electronic charge ordering at $T_{\rm CO}=135$~K. The optical properties obtained from polarized reflection measurements above and below $T_{\rm CO}$ can be well described by calculations based on first-principle density-functional theory (DFT). We discuss the effect of electronic correlations on the metal-insulator transition.
The existence of degenerate or gapless edge states is a characteristic feature of topological insulators, but is difficult to detect in the presence of interactons. We propose a new method to obtain the degeneracy of the edge states from the perspective of entanglement entropy, which is very useful to identify interacting topological states. Employing the determinant quantum Monte Carlo technique, we investigate the interaction effect on two representative models of fermionic topological insulators in one and two dimensions, respectively. In the two topologically nontrivial phases, the edge de…
The dc-conductivity of electrons on a square lattice interacting with a local repulsion in the presence of disorder is computed by means of quantum Monte Carlo simulations. We provide evidence for the existence of a transition from an Anderson insulator to a correlated disordered metal with a universal value of the critical dc-conductivity σ_{dc,crit} = (1.18 \pm 0.06) e^{2}/h at the transition.
Topological states of matter were first introduced for non-interacting fermions on an infinite uniform lattice. Since then, substantial effort has been made to generalize these concepts to more complex settings. Recently, local markers have been developed that can describe the topological state of systems without translational symmetry and well-defined gap. However, no local marker for interacting matter has been proposed yet that is capable of directly addressing an interacting system. Here we suggest such a many-body local marker based on the single-particle Green's function. Using this mark…
Recent developments of experimental techniques have given us unprecedented opportunities of studying topological insulators in high dimensions, while some of the dimensions are "synthetic", in the sense that the effective lattice momenta along these synthetic dimensions are controllable periodic tuning parameters. In this work, we study interaction effects on topological insulators with synthetic dimensions. We show that although the free fermion band structure of high dimensional topological insulators can be precisely simulated with the "synthetic techniques", the generic interactions in the…
We study the interaction effects on thin films of topological mirror Kondo insulators (TMKI), where the strong interaction is expected to play an important role. Our study has led to the following results: (1) We identify a rich phase diagram of non-interacting TMKI with different mirror Chern numbers in the monolayer and bilayer thin films; (2) We obtain the phase diagram with interaction and identify the regimes of interaction parameters to mimic bosonic symmetry protected topological phases with either gapless bosonic modes or spontaneous mirror symmetry breaking at the boundary; (3) For th…
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We theoretically discover purely electronic polarization modes in THz frequency region in dimer Mott insulators $κ$-(BEDT-TTF)$_2$X. The unusual low-frequency modes arise from the coupling between the oscillation of intradimer electric dipole moments and that of alternating interdimer bond orders. These collective motions play an important role in the dynamical dielectric properties of the dimer Mott insulators. Near the phase boundary of the dimer Mott transition, the ferroelectric ground state is realized by introducing electron-lattice coupling.
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For D-dimensional weakly interacting topological insulators in certain symmetry classes, the topological invariant can be calculated from a D- or (D+1)-dimensional integration over a certain curvature function that is expressed in terms of single-particle Green's functions. Based on the divergence of curvature function at the topological phase transition, we demonstrate how a renormalization group approach circumvents these integrations and reduces the necessary calculation to that for the Green's function alone, rendering a numerically efficient tool to identify topological phase transitions …
Dynamical mean-field theory is employed to calculate the electronic charge reconstruction of multilayered inhomogeneous devices composed of semi-infinite metallic lead layers sandwiching barrier planes of a strongly correlated material (that can be tuned through the metal-insulator Mott transition). The main focus is on barriers that are doped Mott insulators, and how the electronic charge reconstruction can create well-defined Mott insulating regions in a device whose thickness is governed by intrinsic materials properties, and hence may be able to be reproducibly made.
Parafermions are generalizations of Majorana fermions that may appear in interacting topological systems. They are known to be powerful building blocks of topological quantum computers. Existing proposals for realizations of parafermions typically rely on strong electronic correlations which are hard to achieve in the laboratory. We identify a novel physical system in which parafermions generically develop. It is based on a quantum point contact formed by the helical edge states of a quantum spin Hall insulator in vicinity to an ordinary $s$-wave superconductor. Interestingly, our analysis sug…
Motivated by the unveiled complexity of nonmagnetic insulating behavior in pentavalent post-perovskite NaIrO$_3$, we have studied its electronic structure and phase diagram in the plane of Coulomb repulsive interaction and spin-orbit coupling (SOC) by using the newly developed local density approximation plus Gutzwiller method. Our theoretical study proposes the metal-insulator transition can be generated by two different physical pictures: renormalized band insulator or Mott insulator regime. For the realistic material parameters in NaIrO$_3$, Coulomb interaction $U=2.0 (J=U/4)$ eV and SOC st…
Symmetry Protected Topological (SPT) phases are a minimal generalization of the concept of topological insulators to interacting systems. In this paper we describe the classification and properties of such phases for three dimensional(3D) electronic systems with a number of different symmetries. For symmetries representative of all classes in the famous 10-fold way of free fermion topological insulators/superconductors, we determine the stability to interactions. By combining with results on bosonic SPT phases we obtain a classification of electronic 3D SPT phases for these symmetries. In case…
We study, by means of the density-matrix renormalization group (DMRG) technique, the evolution of the ground state in a one-dimensional topological insulator, from the non-interacting to the strongly-interacting limit, where the system can be mapped onto a topological Kondo-insulator model. We focus on a toy model Hamiltonian (i.e., the interacting "$sp$-ladder" model), which could be experimentally realized in optical lattices with higher orbitals loaded with ultra-cold fermionic atoms. Our goal is to shed light on the emergence of the strongly-interacting ground state and its topological cla…
The aim of this series of two papers is to discuss topological invariants for interacting topological insulators (TIs). In the first paper (I), we provide a paradigm of efficient numerical evaluation scheme for topological invariants, in which we demystify the procedures and techniques employed in calculating Z2 invariant and spin Chern number via zero-frequency single-particle Green's function in quantum Monte Carlo (QMC) simulations. Here we introduce a periodization process to overcome the ubiquitous finite-size effect, so that the calculated spin Chern number shows ideally quantized values…
We revisit the effects of the Hubbard repulsion on quantum spin Hall effects (QSHE) in two-dimensional quantum lattice models. We present both unbiased exact diagonalization and density-matrix renormalization group simulations with numerical evidences for a continuous quantum phase transition (CQPT) separating QSHE from the topologically trivial antiferromagnetic phase. Our numerical results suggest that, the nature of CQPT exhibits distinct finite-size scaling behaviors, which may be consistent with either Ising or XY universality classes for different time-reversal symmetric QSHE systems.
Magnetic structures of organic Mott insulators X[Pd(dmit)2]2 (X=Me4P, Me4Sb), of which electronic states are located near quantum spin liquid (X=EtMe3Sb), are demonstrated by 13C NMR. Antiferromagnetic spectra and nuclear relaxations show two distinct magnetic moments within each Pd(dmit)2 molecule, which cannot be described by single band dimer-Mott model and requires intramolecular electronic correlation. This unconventional fragmentation of S = 1/2 electron spin with strong quantum fluctuation is presumably caused by nearly degenerated intramolecular multiple orbitals, and shares a notion o…
We study in this work the ground state entanglement properties of two models of non-interacting fermions moving in one-dimension (1D), that exhibit metal-insulator transitions. We find that entanglement entropy grows either logarithmically or in a power-law fashion in the metallic phase, thus violating the (1D version of) entanglement area law. No such violation is found in the insulating phase. We further find that characteristics of {\em single fermion} states at the Fermi energy (which can {\em not} be obtained from the many-fermion Slater determinant) is captured by the lowest energy singl…
Very recently, a new two-dimensional graphene-like topological insulator, Bi14Rh3I9, has been synthesized. The Bi-Rh sheets with a strong spin-orbit interaction are graphene analogues with a honeycomb net composed of RhBi8 cubes. Here we derive the low-energy effective Hamiltonian involving spin-orbit coupling for Bi14Rh3I9. In the absence of spin-orbit coupling, the Bi-Rh sheets show two inequivalent Dirac cones at the corners of the hexagonal Brillouin zone. The spin-orbit interaction opens a 2400 K bandgap at the Dirac points and establishes the quantum spin Hall effect in the Bi-Rh sheets.…
Recently it was shown that the topological properties of $2D$ and $3D$ topological insulators are captured by a $\mathbb{Z}_2$ chiral anomaly in the boundary field theory. It remained, however, unclear whether the anomaly survives electron-electron interactions. We show that this is indeed the case, thereby providing an alternative formalism for treating topological insulators in the interacting regime. We apply this formalism to fractional topological insulators (FTI) via projective/parton constructions and use it to test the robustness of all fractional topological insulators which can be de…
Using exact diagonalization and quantum Monte Carlo calculations we investigate the effects of disorder on the phase diagram of both non-interacting and interacting models of two-dimensional topological insulators. In the fermion sign problem-free interacting models we study, electron-electron interactions are described by an on-site repulsive Hubbard interaction and disorder is included via the one-body hopping operators. In both the non-interacting and interacting models we make use of recent advances in highly accurate real-space numerical evaluation of topological invariants to compute pha…
In complex oxide materials, changes in electronic properties are often associated with changes in crystal structure, raising the question of the relative roles of the electronic and lattice effects in driving the metal-insulator transition. This paper presents a combined theoretical and experimental analysis of the dependence of the metal-insulator transition of NdNiO$_3$ on crystal structure, specifically comparing properties of bulk materials to one and two layer samples of NdNiO$_3$ grown between multiple electronically inert NdAlO$_3$ counterlayers in a superlattice. The comparison amplifi…
We derive the effective charge- and current-density operators for the strong-coupling limit of a single-band Mott insulator in the presence of spin-orbit coupling and show that the spin-orbit contribution to the effective charge density leads to novel mechanisms for multiferroic behavior. In some sense, these mechanisms are the electronic counterpart of the ionic-based mechanisms, which have been proposed for explaining the electric polarization induced by spiral spin orderings. The new electronic mechanisms are illustrated by considering cycloidal and proper screw magnetic orderings on sawtoo…
One salient feature of systems with Moiré superlattice is that, Chern number of "minibands" originating from each valley of the original graphene Brillouin zone becomes a well-defined quantized number because the miniband from each valley can be isolated from the rest of the spectrum due to the Moiré potential. Then a Moiré system with a well-defined valley Chern number can become a nonchiral topological insulator with $U(1) \times Z_3 $ symmetry and a $\mathbb{Z}$ classification at the free fermion level. Here we demonstrate that the strongly interacting nature of the Moiré system reduces the…
Successive quantum transitions in an intermediate regime are shown to exist between the superfluid and Mott insulating states for interacting bosonic atoms in one dimension with a trapping potential. These transitions, which are caused by the interplay of the trapping potential with the competition between the kinetic energy and the interaction, reveal novel many-body effects as reflected by low-lying excitation behavior, unconventional long-range correlations and an even-odd alternating squeezing process of superfluid bosons into the Mott insulating state. These features, most likely being ge…
Following a recent discovery of the Insulator-to-Metal Transition induced by electric field in GaTa$_{4}$Se$_{8}$, we performed a detailed Scanning Tunneling Microscopy/Spectroscopy study of both pristine (insulating) and transited (conducting) crystals of this narrow gap Mott insulator. The spectroscopic maps show that pristine samples are spatially homogeneous insulators while the transited samples reveal at nanometer scale a complex electronic pattern that consists of metallic and super-insulating patches immersed in the pristine insulating matrix. Surprisingly, both kinds of patches are ac…
The interplay between topology and correlation lies at the forefront of modern condensed matter physics. In this paper, we study the extended fermion-Hubbard model, including the on-site as well as the nearest-neighbor repulsive interactions, on a topological square lattice that supports the Chern insulator. Within the mean-field method, we find that the spontaneous symmetry breaking (SSB) charge-density wave or antiferromagnetic insulator dominates the system when the onsite or nearest-neighbor interactions are strong enough. It is interesting that the antiferromagnetic Chern insulator will a…
We present a Green's function formalism to investigate the topological properties of weakly interacting one-dimensional topological insulators, including the bulk-edge correspondence and the quantum criticality near topological phase transitions, and using interacting Su-Schrieffer-Heeger model as an example. From the many-body spectral function, we find that closing of the bulk gap remains a defining feature even if the topological phase transition is driven by interactions. The existence of edge state in the presence of interactions can be captured by means of a T-matrix formalism combined w…
Mott insulator to metal transitions under electric field are currently the subject of numerous fundamental and applied studies. This puzzling effect, which involves non-trivial out-of-equilibrium effects in correlated systems, is indeed at play in the operation of a new class of electronic memories, the Mott memories. However the combined electronic and thermal effects are difficult to disentangle in Mott insulators undergoing such transitions. We report here a comparison between the properties under electric field of a canonical Mott insulator and a model built on a realistic 2D resistor netw…
Distinguishing the nontrivial symmetry-protected topological (SPT) phase from the trivial insulator phase in the presence of electron-electron interaction is an urgent question to the study of topological insulators, due to the fact that most of the topological indices defined for free electron systems are very likely unsuitable for interacting cases. In this work, we demonstrate that the strange correlator is a sensitive diagnosis to detect SPT states in interacting systems. Employing large-scale quantum Monte Carlo (QMC) simulations, we investigate the interaction-driven quantum phase transi…
We numerically investigate the surface states of a strong topological insulator in the presence of strong electron-electron interactions. We choose a spherical topological insulator geometry to make the surface amenable to a finite size analysis. The single-particle problem maps to that of Landau orbitals on the sphere with a magnetic monopole at the center that has unit strength and opposite sign for electrons with opposite spin. Assuming density-density contact interactions, we find superconducting and anomalous (quantum) Hall phases for attractive and repulsive interactions, respectively, a…
We calculate the corrections to the conductivity and compressibility of a disordered metal when the mean free path is smaller than the screening length. Such a condition is shown to be realized for low densities and large disorder. Analysis of the stability of the metallic state reveals a transition to the insulating state in two-dimensions.
Domain walls in interacting electronic systems can have distinct localized states, which often govern physical properties and may lead to unprecedented functionalities and novel devices. However, electronic states within domain walls themselves have not been clearly identified and understood for strongly correlated electron systems. Here, we resolve the electronic states localized on domain walls in a Mott-charge-density-wave(CDW) insulator 1T-TaS2 using scanning tunneling spectroscopy. We establish that the domain wall state decomposes into two nonconducting states located at the center of do…
We study the electronic spectral properties in two examples of strongly interacting systems: a Mott-Hubbard insulator with additional electron-boson interactions, and a polaronic semiconductor. An approximate unified framework is developed for the high energy part of the spectrum, in which the electrons move in a random field determined by the interplay between magnetic and bosonic fluctuations. When the boson under consideration is a lattice vibration, the resulting isotope effect on the spectral properties is similar in both cases, being strongly temperature and energy dependent, in qualitat…
The effects of a long range electronic potential on a one dimensional commensurate Charge Density Wave (CDW) state are investigated. Using numerical techniques it is shown that a transition to a metallic ground state is reached as the range of the electron-electron repulsion increases. In this metallic state, the optical conductivity exhibits a large Drude weight. Possible interpretations of our results are discussed.