用边缘激发几何方法研究体相n-InP的本征发射光谱
Edge excitation geometry for studying intrinsic emission spectra of bulk n-InP
摘要：
利用在InP晶片端面激发并从宽边记录的光致发光线的形状来研究本征发射光谱。该程序是不太敏感的表面性质和载流子动力学比传统的方法与光致发光的反射或透射几何形状。我们的方法提供了一个工具，研究少数载流子的非平衡分布的影响，掺杂的直接带半导体。
英文摘要：
The shape of the photoluminescence line excited at an edge face of InP wafer and recorded from the broadside is used to investigate the intrinsic emission spectrum. The procedure is much less sensitive to the surface properties and the carrier kinetics than the conventional methods used with the reflection or transmission geometry of photoluminescence. Our method provides a tool for studying the effects of non-equilibrium distribution of minority carriers in doped direct-band semiconductors.
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