本征体材料InP中的电子自旋弛豫
Electron spin relaxation in intrinsic bulk InP semiconductor
摘要：
利用时间分辨泵浦探测反射（TRPPR）技术，在室温和70 K下，利用同圆偏振和反圆偏振飞秒脉冲，研究了本征体磷化铟（InP）半导体中电子自旋动力学。随着抽运光子能量的增加，薄膜的反射率由漂白转变为吸收，这可以用自旋敏感的能带填充效应和带隙重整化效应来解释。电子自旋弛豫时间的密度依赖性在室温和70 K下表现出相似的趋势。随着载流子浓度的增加，电子自旋弛豫时间先增加后减小，达到最大值后再减小。我们的实验结果与最近的理论预测[Jiang and Wu，Phys.Rev.B79，125206（2009）]吻合得很好，并且D 'yakonov-Perel'机制被认为是对本征体InP半导体中电子自旋弛豫的主要贡献。
英文摘要：
Electron spin dynamics in intrinsic bulk Indium Phosphide (InP) semiconductor is studied by time resolved pump probe reflectivity (TRPPR) technique using the co- and counter-circularly polarized femtosecond pulses at room temperature and 70 K. The reflectivity change from bleaching into absorption is observed with increasing pump photon energy, which can be explained in terms of the spin sensitive band filling and band gap renormalization effects. Density dependence of electron spin relaxation time shows similar tendency at room temperature and 70 K. With increasing carrier density, the electron spin relaxation time increases and then decreases after reaching a maximum value. Our experimental results agree well with the recent theoretical prediction [Jiang and Wu, Phys. Rev. B 79, 125206 (2009)] and D'yakonov-Perel' mechanism is considered as a dominating contribution to the electron spin relaxation in intrinsic bulk InP semiconductor.
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