反铁磁绝缘体磁畴壁处出现的金属界面--消失外尔电子的命运
Metallic Interface Emerging at Magnetic Domain Wall of Antiferromagnetic Insulator---Fate of Extinct Weyl Electrons
摘要：
与普通半导体不同，拓扑绝缘体伴随着由狄拉克型费米子描述的受保护的金属表面。在这里，我们从理论上表明，另一个新兴的二维金属嵌入在大块绝缘体实现在磁畴壁。畴壁长期以来一直被研究作为老式和前沿自旋电子学的成分。畴壁在这里，作为一个看似微不足道的反铁磁绝缘体的接口，紧急实现了一个功能接口，由零模式与强大的二维费米表面，其中烧绿石铱氧化物提出主机凝聚态实现外尔费米子提供这样的例子在低温下保存。钉扎在畴壁的inap态的存在，理论上类似于聚乙炔中的自旋/电荷孤子，并作为隐藏的一维弱Chern绝缘体的边缘被保护，其特征在于零维A类拓扑不变量，解决了在R2 Ir 2 O 7中观察到的实验难题。畴壁实现了电子的量子限制，并提供了一个净均匀磁化，这使得磁控制电子界面输运超越半导体范式。
英文摘要：
Topological insulators, in contrast to ordinary semiconductors, accompany protected metallic surfaces described by Dirac-type fermions. Here, we theoretically show another emergent two-dimensional metal embedded in the bulk insulator is realized at a magnetic domain wall. The domain wall has long been studied as ingredients of both old-fashioned and leading-edge spintronics. The domain wall here, as an interface of seemingly trivial antiferromagnetic insulators, emergently realizes a functional interface preserved by zero modes with robust two-dimensional Fermi surfaces, where pyrochlore iridium oxides proposed to host condensed-matter realization of Weyl fermions offer such examples at low temperatures. The existence of ingap states pinned at domain walls, theoretically resembling spin/charge solitons in polyacetylene, and protected as the edge of hidden one-dimensional weak Chern insulators characterized by a zero-dimensional class A topological invariant, solves experimental puzzles observed in R2Ir2O7 with rare earth elements R. The domain wall realizes a novel quantum confinement of electrons and embosses a net uniform magnetization, which enables magnetic control of electronic interface transports beyond semiconductor paradigm.
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