arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 1305.0959cond-mat.mtrl-sci
收藏

BiTeI中压力诱导拓扑量子相变的特征

Signatures of a Pressure-Induced Topological Quantum Phase Transition in BiTeI

Xiaoxiang Xi, Chunli Ma, Zhenxian Liu, Zhiqiang Chen, Wei Ku, H. Berger, C. Martin, D. B. Tanner, G. L. Carr

摘要:

我们报告的两个签名的压力诱导的拓扑量子相变的极性半导体BiTeI使用X-射线粉末衍射和红外光谱的观察。X射线数据证实,BiTeI保持在其环境压力结构高达8 GPa。晶格参数比c/a在2.0-2.9 GPa之间显示出最小值,表明在过渡期间通过pz带交叉增强的c轴键合。在相同的压力范围内,红外光谱揭示了一个最大的光谱重量的载流子,反映了半导体带隙的关闭和重新打开。这两个特征都是拓扑量子相变的特征,并且与最近的理论提议一致。

英文摘要:

We report the observation of two signatures of a pressure-induced topological quantum phase transition in the polar semiconductor BiTeI using x-ray powder diffraction and infrared spectroscopy. The x-ray data confirm that BiTeI remains in its ambient-pressure structure up to 8 GPa. The lattice parameter ratio c/a shows a minimum between 2.0-2.9 GPa, indicating an enhanced c-axis bonding through pz band crossing as expected during the transition. Over the same pressure range, the infrared spectra reveal a maximum in the optical spectral weight of the charge carriers, reflecting the closing and reopening of the semiconducting band gap. Both of these features are characteristics of a topological quantum phase transition, and are consistent with a recent theoretical proposal.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

↑