有机分子的电子能隙分布与其光致发光谱的比较
Comparing the distribution of the electronic gap of an organic molecule with its photoluminescence spectrum
摘要：
用扫描隧道显微镜（STM）和光致发光（PL）分析研究了有机分子N，N ′-二苯基-N，N ′-双（3-甲基苯基）-（1，1 ′-联苯）-4，4 ′-二胺（TPD）的电子能隙结构。在样品的不同点上测量了数千个电流-电压特性，显示了半导体的典型行为。曲线的分析使我们能够构建一个间隙分布直方图，重新组装该化合物的PL光谱。我们的分析表明，在TPD膜中观察到的间隙分布的大部分主要来自分子化合物的LUMO能级的位置的不确定性，正如理论所预期的那样。这一分析表明，STM可以提供相关的信息，不仅与半导体间隙的预期值有关，而且还与其分布有关，这会影响其物理性质，例如本文报道的PL和吸收分布的情况。
英文摘要：
The electronic gap structure the organic molecule N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, or TPD, has been studied by means of a Scanning Tunneling Microscope (STM) operated under ambient conditions, and by Photoluminescence (PL) analysis. Thousands of current-voltage characteristics have been measured at different spots of the sample showing the typical behavior of a semiconductor. The analysis of the curves allows us to construct a gap distribution histogram which reassembles the PL spectrum of this compound. Our analysis shows that in the TPD films most of the observed distribution of the gap comes mainly from an uncertainty in the position of the LUMO levels of the molecular compound as would be expected from theory. This analysis demonstrates that STM can give relevant information, not only related to the expected value of a semiconductor gap, but also on its distribution which affects its physical properties such as the case of the PL and absorption distributions as here is reported.
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