导体中的电磁感应
On electromagnetic induction in electric conductors
摘要：
实验验证的法拉第电磁感应定律（EMI）时，薄铜匝，位于一个大的磁线圈内产生电动势。它已被建立，电动势（emf）值应不仅取决于通过一个匝的磁感应通量的变化，并在其交叉的磁电力线的对称性也。在匝间磁场变化对称的情况下，电磁干扰定律在充分近似下适用。本文对电弧中的感应电动势和置于变磁场中的导体的直截面进行了实验研究。在磁场分布对称的情况下，电弧感应电动势与电弧长度呈线性关系，并观察到磁场对称性对电弧感应电动势的影响。直流段感应电动势随电流脉冲周期变化的曲线与匝数和电弧的曲线相似。推导了曲线导体电磁干扰的一般规律。计算了缠绕在其上的线圈的感应电动势，并与实验数据进行了比较。为法律确定了比例系数。已经描述了在存在感应电流的情况下感应电动势可能不存在的特殊情况。在匝间感应电压较低的情况下，对感应电流进行了理论估算。在计算半导体和电离导体的感应电动势时，必须考虑载流子的浓度。
英文摘要：
Experimental validation of the Faraday's law of electromagnetic induction (EMI) is performed when an electromotive force is generated in thin copper turns, located inside a large magnetic coil. It has been established that the electromotive force (emf) value should be dependent not only on changes of the magnetic induction flux through a turn and on symmetry of its crossing by magnetic power lines also. The law of EMI is applicable in sufficient approximation in case of the changes of the magnetic field near the turn are symmetrical. Experimental study of the induced emf in arcs and a direct section of the conductor placed into the variable field has been carried out. Linear dependence of the induced emf on the length of the arc has been ascertained in case of the magnetic field distribution symmetry about it. Influence of the magnetic field symmetry on the induced emf in the arc has been observed. The curve of the induced emf in the direct section over period of current pulse is similar to this one for the turns and arcs. The general law of EMI for a curvilinear conductor has been deduced. Calculation of the induced emf in the turns wrapped over it and comparison with the experimental data has been made. The proportionality factor has been ascertained for the law. Special conditions have been described, when the induced emf may not exist in the presence of inductive current. Theoretical estimation of the inductive current has been made at a induced low voltage in the turn. It has been noted the necessity to take into account the concentration of current carriers in calculation of the induced emf in semiconductors and ionized conductors.
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