CCD基体中晶体缺陷的光学鉴定
Optical identification of crystal defects in CCD matrix
摘要：
提出了一种基于面阵CCD的半导体缺陷识别方法。由于不需要特殊和昂贵的设备，该过程简单易行。该方法将缺陷分为两组：点缺陷和空间缺陷（位错）。在实验期间，证明了缺陷的类型影响光聚集期间暗电流生成的行为。
英文摘要：
An original idea of semiconductor defects identification in CCD matrix was presented in the article. The procedure is simple and easy to execute because of no need for special and expensive equipment. The method classifies defects into two groups: the point defects and the spatial defects (dislocations). During the experiments it was proven that the type of defect affects the behaviour of the dark current generation during the light gathering .
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
