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arXiv 1302.4675cond-mat.mes-hall
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Ge的光学自旋取向与退极化

Optical spin orientation and depolarization in Ge

C. Rinaldi, M. Cantoni, R. Bertacco

摘要:

半导体中的光学自旋取向和退偏现象对于自旋光电子学的发展具有极其重要的意义。在本文中,我们采用Ge基自旋光电二极管研究的室温光谱依赖的光学自旋取向的锗,在400-1550 nm范围内,和光载流子自旋弛豫现象。除了最大的自旋极化的光载流子的光子能量共振的直接间隙(1550 nm),我们实验证明了第二个相当大的峰值在530 nm处的存在下,由于光产生远离中心的布里渊区,L谷内。此外,我们的数据表明,等效的Ge中的空穴的自旋寿命是在5-10 ps的数量级,这意味着在室温下的空穴的自旋扩散长度大于预期,在150-220 nm的数量级。

英文摘要:

Optical spin orientation and depolarization phenomena in semiconductors are of overwhelming importance for the development of spin-optoelectronics. In this paper we employ Ge-based spin-photodiodes to investigate the room temperature spectral dependence of optical spin orientation in Germanium, in the range 400-1550 nm, and the photo-carrier spin relaxation phenomena. Apart from the maximum in the spin polarization of photo-carriers for photon energy resonant with the direct gap (1550 nm), we experimentally demonstrate the presence of a second sizable peak at 530 nm due to photo-generation far away from the center of the Brillouin zone, within the L valleys. Furthermore, our data indicate that the equivalent the spin lifetime of holes in Ge is in the order of 5-10 ps, meaning that the spin diffusion length for holes at room temperature is larger than expected, in the order of 150-220 nm.

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