光激发体材料n-InP中少数载流子的温控Lévy飞行
Temperature controlled Lévy flights of minority carriers in photoexcited bulk n-InP
摘要：
本文研究了在300 ~ 78 K温度范围内，n-InP平板边缘受光激发时，由反常光助扩散引起的少数载流子的空间分布。该实验提供了一个实现的“Lévy飞行”的随机行走的孔，其中的Lévy分布指数γ是由温度控制。结果表明，γ（T）的变化接近于先前基于准平衡（van Roosbroek-Shockley）本征发射光谱的理论预测，γ=1-Δ/kT，其中Δ（T）是吸收光谱的Urbach拖尾参数。在较低温度下γ的减小导致空穴扩散的巨大增强-在距离光激发区域超过1 cm的距离上。
英文摘要：
We study the spatial distribution of minority carriers arising from their anomalous photon-assisted diffusion upon photo-excitation at an edge of n-InP slab for temperatures ranging from 300 K to 78 K. The experiment provides a realization of the "Lévy flight" random walk of holes, in which the Lévy distribution index gamma is controlled by the temperature. We show that the variation γ(T) is close to that predicted earlier on the basis of the assumed quasi-equilibrium (van Roosbroek-Shockley) intrinsic emission spectrum, γ=1-Δ/kT, where Δ(T) is the Urbach tailing parameter of the absorption spectra. The decreasing γat lower temperatures results in a giant enhancement in the spread of holes -- over distances exceeding 1 cm from the region of photo-excitation.
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