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arXiv 1302.2014cond-mat.mes-hall
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用温度相关磁输运测量石墨烯中量子化共存的电子和空穴

Quantized coexisting electrons and holes in graphene measured using temperature dependent magneto-transport

E. V. Kurganova, S. Wiedmann, A. J. M. Giesbers, R. V. Gorbachev, K. S. Novoselov, M. I. Katsnelson, T. Tudorovskiy, J. C. Maan, U. Zeitler

摘要:

我们提出了温度依赖的磁输运实验周围的电荷中性点在石墨烯和确定的电位波动的幅度$s$负责形成的电子空穴水坑。实验值$s \approx 20$毫电子伏是相当大的比在常规的半导体,这意味着一个强大的本地化的载流子可观察到室温。令人惊讶的是,在量子化的制度,霍尔电阻率超过最高的平台值在高温下。我们通过模型计算表明,这种奇特的行为是预期在任何系统中共存的电子和空穴时,能量谱是量子化的,载流子是部分本地化的。

英文摘要:

We present temperature-dependent magneto-transport experiments around the charge neutrality point in graphene and determine the amplitude of potential fluctuations $s$ responsible for the formation of electron-hole puddles. The experimental value $s \approx 20$ meV is considerably larger than in conventional semiconductors which implies a strong localization of charge carriers observable up to room temperature. Surprisingly, in the quantized regime, the Hall resistivity overshoots the highest plateau values at high temperatures. We demonstrate by model calculations that such a peculiar behavior is expected in any system with coexisting electrons and holes when the energy spectrum is quantized and the carriers are partially localized.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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