铋掺杂TlCl晶体的近红外发光
Near-infrared luminescence in bismuth-doped TlCl crystal
摘要：
对TlCl：Bi晶体的光谱性质进行了实验和理论研究。观察到两个寿命约为0.25ms的宽近红外发光带：0.40、0.45、0.70和0.80mkm辐射激发的1.18mkm附近的强带和0.40和0.45mkm辐射激发的> 1.5mkm的弱带。对TlCl晶格中Bi相关中心的计算机模拟表明，Bi^+_V^-（Cl）中心（Bi^+在Tl位，Cl空位在最近的阴离子位）最有可能是红外发光的原因。
英文摘要：
Experimental and theoretical studies of spectral properties of crystalline TlCl:Bi are performed. Two broad near-infrared luminescence bands with a lifetime about 0.25 ms are observed: a strong band near 1.18 mkm excited by 0.40, 0.45, 0.70 and 0.80 mkm radiation, and a weak band at > 1.5 mkm excited by 0.40 and 0.45 mkm radiation. Computer modeling of Bi-related centers in TlCl lattice suggests that Bi^+__V^-(Cl) center (Bi^+ in Tl site and a negatively charged Cl vacancy in the nearest anion site) is most likely responsible for the IR luminescence.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
