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arXiv 1210.6402cond-mat.mes-hall
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弯曲碳纳米管量子点中的g张量控制

g-Tensor Control in Bent Carbon Nanotube Quantum Dots

R. A. Lai, H. O. H. Churchill, C. M. Marcus

摘要:

我们演示了栅极控制的电子g张量在单和双量子点沿弯曲的碳纳米管形成。从单点激发谱对磁场大小和方向的依赖关系中,我们提取了自旋轨道耦合、谷耦合、自旋和轨道磁矩。用电导中近藤峰的分裂作为塞曼能量的灵敏探针来测量g张量的门控。在双量子点体系中,利用二维电荷稳定性图中共隧穿线的位置与磁场的关系来推断两个量子点沿纳米管的位置。

英文摘要:

We demonstrate gate control of the electronic g-tensor in single and double quantum dots formed along a bend in a carbon nanotube. From the dependence of the single-dot excitation spectrum on magnetic field magnitude and direction, we extract spin-orbit coupling, valley coupling, spin and orbital magnetic moments. Gate control of the g-tensor is measured using the splitting of the Kondo peak in conductance as a sensitive probe of Zeeman energy. In the double quantum dot regime, the magnetic field dependence of the position of cotunneling lines in the two dimensional charge stability diagram is used to infer the positions of the two dots along the nanotube.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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