杂质效应对BiS_{2}基超导体配对对称性的影响
Impurity effect as a probe of the paring symmetry in BiS_{2} based superconductors
摘要：
基于Bogoliubov-de-Gennes双轨道模型，研究了BiS_{2}层状超导体的杂质效应。计算了超导临界温度（T_{c}）与杂质浓度的关系。发现自旋单重态最近邻配对d波态和自旋三重态次近邻配对p波态的T_{c}有明显的降低，而各向同性s波态的T_{c}没有降低.还探讨了各种配对态的单杂质效应。局域态密度谱中的杂质共振峰只出现在d波态。对于自旋三重态NNN配对p波态，正杂质势时出现两个带隙内峰，负杂质势时出现一个带隙内峰，且随着势强的减小，带隙内峰向低能方向移动.这些结果可用于检测BiS_{2}基超导体的配对对称性。
英文摘要：
The impurity effects are studied for the BiS_{2}- layered superconductors based on a two orbital model with the Bogoliubov-de-Gennes technique. The superconducting critical temperature (T_{c}) as a function of the mpurity concentration is calculated. Significant reduction of T_{c} is found for spin singlet nearest-neighboring paring d-wave state and the spin triplet next-nearest-neighboring (NNN) paring p-wave state, while no depression of T_{c} for isotropic s-wave state. The single impurity effects for various paring states are also explored. The impurity resonance peak in the local density of states spectrum is found only for the d-wave state. For the spin triplet NNN paring p-wave state, two in-gap peaks occur in the case of positive impurity potential; and a single in-gap peak is found for the negative impurity potential, which shifts towards to lower energy with decreasing the potential strength. These results can be used to detect the paring symmetry of the BiS_{2}- based superconductors.
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