单轴热压法制备块体MgB2的>3T陷阱场
A Trapped Field of >3T in Bulk MgB2 Fabricated by Uniaxial Hot Pressing
摘要：
在17.5 K下，在直径为25 mm，厚度为5.4 mm的两个盘形块状MgB2超导体的磁化堆叠中测量了超过3 T的俘获场。块状MgB2样品通过单轴热压制成，这是一种易于扩展的工业技术，其最大理论密度为91%。利用毕奥-萨伐尔定律由俘获场数据得到的宏观临界电流密度与实测的局部临界电流密度一致。从这一点，我们得出结论，临界电流密度，因此捕获场的性能，是有限的磁通钉扎在MgB2，而不是缺乏连接。这强烈表明，增加样品尺寸和通过掺杂增强钉扎将允许进一步增加大块MgB 2的俘获场性能。
英文摘要：
A trapped field of over 3 T has been measured at 17.5 K in a magnetised stack of two disc-shaped bulk MgB2 superconductors of diameter 25 mm and thickness 5.4 mm. The bulk MgB2 samples were fabricated by uniaxial hot pressing, which is a readily scalable, industrial technique, to 91% of their maximum theoretical density. The macroscopic critical current density derived from the trapped field data using the Biot-Savart law is consistent with the measured local critical current density. From this we conclude that critical current density, and therefore trapped field performance, is limited by the flux pinning available in MgB2, rather than by lack of connectivity. This suggests strongly that both increasing sample size and enhancing pinning through doping will allow further increases in trapped field performance of bulk MgB2.
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