从硅表面的环境热中获取电能
Electricity Harvested from Ambient Heat across Silicon Surface
摘要：
我们报道了室温下硅片二维表面离子的无限热运动可以产生电能。一个典型的硅器件，其上制备了非对称的Au和Ag薄膜电极，在5 M CuCl 2溶液中，当加载一个25 kΩ电阻时，可以产生典型的开路电压高达0.40 V，输出电流超过11 μA。输出电流与温度、浓度呈正相关。最大输出电流和功率密度分别为17 μA和8.6 μW/cm ~ 2。通过四组对照实验排除化学反应的可能性。提出了一种可能的动态阻力机制来解释实验结果。这一发现进一步表明，环境中的环境热可以通过2D半导体表面或低维材料收集，并将为可再生能源的研究做出重大贡献。然而，这一发现并不符合热力学第二定律。今后还需要开展大量工作来研究这一现象背后的机制。
英文摘要：
We report that electricity can be generated from limitless thermal motion of ions by two dimensional (2D) surface of silicon wafer at room temperature. A typical silicon device, on which asymmetric electrodes with Au and Ag thin films were fabricated, can generate a typical open-circuit voltage up to 0.40 V in 5 M CuCl2 solution and an output current over 11 μA when a 25 kΩ resistor was loaded into the circuit. Positive correlation between the output current and the temperature, as well as the concentration, was observed. The maximum output current and power density are 17 μA and 8.6 μW/cm2, respectively. The possibility of chemical reaction was excluded by four groups of control experiments. A possible dynamic drag mechanism was proposed to explain the experimental results. This finding further demonstrates that ambient heat in the environment can be harvested by 2D semiconductor surfaces or low dimensional materials and would contribute significantly to the research of renewable energy. However, this finding does not agree with the second law of thermal dynamatics. A lot of future work will be needed to study the mechanism behind this phenomenon.
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