石墨烯中缺陷诱导近藤效应的重整化群研究
Theory of Defect-Induced Kondo Effect in Graphene: Numerical Renormalization Group Study
摘要：
考虑到缺陷的电子态和晶格结构，建立了一个有效的模型，描述了石墨烯中点缺陷引起的近藤效应。结果表明，该模型可以转化为具有有限化学势的单通道赝能隙Anderson模型。数值重整化群方法的基础上，它是澄清，实验观察到的近藤温度的栅电压依赖性理解在这个框架。
英文摘要：
An effective model that describes the Kondo effect due to a point defect in graphene is developed, taking account of the electronic state and the lattice structure of the defect. It is shown that this model can be transformed into a single-channel pseudogap Anderson model with a finite chemical potential. On the basis of the numerical renormalization group method, it is clarified that the experimentally observed gate-voltage dependence of the Kondo temperature is understood in this framework.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
