石墨烯中安德森杂质引起的近藤效应和电荷涨落电阻率
Kondo and charge fluctuation resistivity due to Anderson impurities in graphene
摘要：
受离子辐照石墨烯实验的启发，我们计算了稀杂质石墨烯的电阻率。在本地的时刻制度，我们采用微扰理论的三阶交换耦合，以确定在高温下的行为内的近藤模型。由于电荷波动的电阻率内获得的平均场方法的安德森杂质模型。由于石墨烯的线性光谱，近藤行为被示出取决于所施加的栅极电压。杂质在石墨烯片上的位置是决定其对近藤尺度和电阻率的影响的重要变量。我们的结果表明，在节点附近的化学势的电荷涨落是负责所观察到的电阻率的温度依赖性，而远离节点的自旋涨落接管。如果杂质能级的能量随化学势线性变化，则与实验数据定量一致。
英文摘要：
Motivated by experiments on ion irradiated graphene, we compute the resistivity of graphene with dilute impurities. In the local moment regime we employ the perturbation theory up to third order in the exchange coupling to determine the behavior at high temperatures within the Kondo model. Resistivity due to charge fluctuations is obtained within the mean field approach on the Anderson impurity model. Due to the linear spectrum of the graphene the Kondo behavior is shown to depend on the gate voltage applied. The location of the impurity on the graphene sheet is an important variable determining its effect on the Kondo scale and resistivity. Our results show that for chemical potential nearby the node the charge fluctuations is responsible for the observed temperature dependence of resistivity while away from the node the spin fluctuations take over. Quantitative agreement with experimental data is achieved if the energy of the impurity level varies linearly with the chemical potential.
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