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arXiv 1202.5350cond-mat.mes-hall
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电荷噪声源的热特性

Thermal properties of charge noise sources

Martin V. Gustafsson, Arsalan Pourkabirian, Göran Johansson, John Clarke, Per Delsing

摘要:

测量了稀释制冷机中单电子晶体管(SET)的温度和偏置依赖性,结果表明,在电压依赖的阈值温度以上,电荷噪声随制冷机温度线性增加,其低温饱和是由于SET自加热引起的。我们进一步表明,负责电荷噪声的两级波动与SET中的电子有很强的热接触,SET中的电子可以处于比衬底高得多的温度。我们认为噪声是由SET金属和附近势阱之间的电子隧穿引起的。

英文摘要:

Measurements of the temperature and bias dependence of Single Electron Transistors (SETs) in a dilution refrigerator show that charge noise increases linearly with refrigerator temperature above a voltage-dependent threshold temperature, and that its low temperature saturation is due to SET self-heating. We show further that the two-level fluctuators responsible for charge noise are in strong thermal contact with the electrons in the SET, which can be at a much higher temperature than the substrate. We suggest that the noise is caused by electrons tunneling between the SET metal and nearby potential wells.

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