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arXiv 1202.4401cond-mat.str-elcond-mat.mes-hall
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铬膜中的反铁磁畴壁工程

Antiferromagnetic Domain Wall Engineering in Chromium Films

J. M. Logan, H. C. Kim, D. Rosenmann, Z. Cai, R. Divan, Oleg G. Shpyrko, E. D. Isaacs

摘要:

我们利用沉积在铬膜上的薄铁帽层的磁阻挫效应设计了一个反铁磁畴壁。通过光刻和湿法蚀刻,我们选择性地去除Fe帽层的区域,以在Cr膜上形成图案化的铁磁掩模。局部去除Fe去除了Cr膜的用户定义区域中的磁阻挫。我们目前的X射线显微衍射结果证实了90°自旋密度波传播畴壁的Cr的形成。该畴壁在由Fe掩模限定的边界处成核。

英文摘要:

We have engineered an antiferromagnetic domain wall by utilizing a magnetic frustration effect of a thin iron cap layer deposited on a chromium film. Through lithography and wet etching we selectively remove areas of the Fe cap layer to form a patterned ferromagnetic mask over the Cr film. Removing the Fe locally removes magnetic frustration in user-defined regions of the Cr film. We present x-ray microdiffraction microscopy results confirming the formation of a 90° spin-density wave propagation domain wall in Cr. This domain wall nucleates at the boundary defined by our Fe mask.

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