SiPM的电气特性与试验频率和温度的关系
Electrical Characterization of SiPM as a Function of Test Frequency and Temperature
摘要：
硅光电倍增器（SiPM）代表了经典光电倍增器的有希望的替代物，例如，用于高能物理和医学物理中的光子检测。在目前的工作中，电气特性的测试设备-由ST微电子制造-提出。面积为3.5x3.5 μ m^2、单元间距为54 μ m的SiPM被制成64 x64单元阵列，填充系数为31%。在频率从20 Hz到1 MHz，温度从300 K到85 K的范围内，测量了SiPM的电容作为反向偏置电压的函数。在400 K到85 K的温度范围内测量了漏电流。因此，阈值电压-即，对应于漏电流的倍增状态开始时的电压可以作为温度的函数来确定。最后，一个电气模型适合再现电容的频率依赖性的依赖。
英文摘要：
Silicon Photomultipliers (SiPM) represent a promising alternative to classical photomultipliers, for instance, for the detection of photons in high energy physics and medical physics. In the present work, electrical characterizations of test devices - manufactured by ST Microelectronics - are presented. SiPMs with an area of 3.5x3.5 micron^2 and a cell pitch of 54 micron were manufactured as arrays of 64x64 cells and exhibiting a fill factor of 31%. The capacitance of SiPMs was measured as a function of reverse bias voltage at frequencies ranging from from 20 Hz up to 1 MHz and temperatures from 300 K down to 85 K. While leakage currents were measured at temperatures from 400 K down to 85 K. Thus, the threshold voltage - i.e., voltage corresponding to that at which the multiplication regime for the leakage current begins - could be determined as a function of temperature. Finally, an electrical model suited to reproduce the dependence of the frequency dependence of capacitance is presented.
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