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arXiv 1111.7238cond-mat.str-el
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强相互作用二维电子系统的临界行为

Critical Behavior of a Strongly Interacting 2D Electron System

A. Mokashi, S. Li, Bo Wen, S. V. Kravchenko, A. A. Shashkin, V. T. Dolgopolov, M. P. Sarachik

摘要:

随着密度$n_s$的降低,硅中低无序二维电子系统的热电势$S$被发现表现出超过一个数量级的急剧增加,趋于在有限的,无序无关的密度$n_t$与$x=1.0\pm 0.1$的临界形式$(-T/S) \propto (n_s-n_t)^x$一致的发散($T$是温度)。我们的研究结果提供了明确的证据,在一个强相互作用的二维电子系统中的相互作用诱导的过渡到一个新的阶段在低密度。

英文摘要:

With decreasing density $n_s$ the thermopower $S$ of a low-disorder 2D electron system in silicon is found to exhibit a sharp increase by more than an order of magnitude, tending to a divergence at a finite, disorder-independent density $n_t$ consistent with the critical form $(-T/S) \propto (n_s-n_t)^x$ with $x=1.0\pm 0.1$ ($T$ is the temperature). Our results provide clear evidence for an interaction-induced transition to a new phase at low density in a strongly-interacting 2D electron system.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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