Electrical control of inter-dot electron tunneling in a quantum dot molecule
K. Müller, A. Bechtold, C. Ruppert, M. Zecherle, G. Reithmaier, M. Bichler, H. J. Krenner, G. Abstreiter, A. W. Holleitner, J. M. Villas-Bôas, J. J. Finley
We employ ultrafast pump-probe spectroscopy to directly monitor electron tunneling between discrete orbital states in a pair of spatially separated quantum dots. Immediately after excitation, several peaks are observed in the pump-probe spectrum due to Coulomb interactions between the photo-generated charge carriers. By tuning the relative energy of the orbital states in the two dots and monitoring the temporal evolution of the pump-probe spectra the electron and hole tunneling times are separately measured and resonant tunneling between the two dots is shown to be mediated both by elastic and inelastic processes. Ultrafast (< 5 ps) inter-dot tunneling is shown to occur over a surprisingly wide bandwidth, up to ~8 meV, reflecting the spectrum of exciton-acoustic phonon coupling in the system.
We theoretically investigated a method to detect a single skyrmion in a magnetic tunneling junction (MTJ) geometry. Using the tunneling Hamiltonian approach, we calculated the tunneling magnetoresistance (TMR) ratio of the skyrmion-ferromagnet bilayer system. We show the TMR ratio is determined sorely by the spin profile of the skyrmion and geometrical factor of the device, if only the system is reasonably clean such that the spectral broadening is smaller than the exchange coupling between the local and the itinerant magnetic moment. The TMR ratio in that case can amount to $30\%$ or higher w…
Using scanning tunneling microscopy (STM), we investigated the evolution of electrical conductance between a Pb tip and Pb(111) surface from tunneling to atomic point contact at a site that was defined with atomic precision. We found that the conductance evolution depended on the contact site, for instance, on-top, bridge, or hollow (hcp and fcc) sites in the Pb lattice. In the transition from tunneling to contact regimes, the conductance measured at the on-top site was enhanced. In the point contact regime, the hollow sites had conductances larger than those of the other sites, and between th…
Spin relaxation from a triplet excited state to a singlet ground state in a semiconductor quantum dot is studied by employing an electrical pump-and-probe method. Spin relaxation occurs via cotunneling when the tunneling rate is relatively large, confirmed by a characteristic square dependence of the relaxation rate on the tunneling rate. When cotunneling is suppressed by reducing the tunneling rate, the intrinsic spin relaxation is dominated by spin-orbit interaction. We discuss a selection rule of the spin-orbit interaction based on the observed double-exponential decay of the triplet state.
We have studied the electrical conductivity of two-dimensional nanowire networks. An analytical evaluation of the contribution of tunneling to their electrical conductivity suggests that it is proportional to the square of the wire concentration. Using computer simulation, three kinds of resistance were taken into account, viz., (i) the resistance of the wires, (ii) the wire---wire junction resistance, and (iii) the tunnel resistance between wires. We found that the percolation threshold decreased due to tunneling. However, tunneling had negligible effect on the electrical conductance of dense…
We study the electrical transport properties of ensembles of bismuth telluride (Bi2Te3) nanoplates grown by solution based chemical synthesis. Devices consisting of Bi2Te3 nanoplates are fabricated by surface treatment after dropping the solution on the structured gold plates and the temperature dependence of resistance shows a nonmetallic behavior. Symmetric tunneling behavior in I-V was observed in both our experimental results and theoretical calculation of surface conductance based on a simple Hamiltonian, which excludes carrier-carrier interactions. Here, we present two devices: one showi…
Inelastic electron tunneling provides a low-energy pathway for the excitation of surface plasmons and light emission. We theoretically investigate tunnel junctions based on metals and graphene. We show that graphene is potentially a highly efficient material for tunneling excitation of plasmons because of its narrow plasmon linewidths, strong emission, and large tunability in the midinfrared wavelength regime. Compared to gold and silver, the enhancement can be up to 10 times for similar wavelengths and up to 5 orders at their respective plasmon operating wavelengths. Tunneling excitation of g…
Electron transport through Majorana nanowire with strongly asymmetric couplings to normal metal leads is considered. In three terminal geometry (electrically grounded nanowire) it is shown that the presence of unbiased electrode restores zero-bias anomaly even for strong Majorana energy splitting. For effectively two-terminal geometry we show that electrical current through asymmetric Majorana junction is qualitatively different from the analogous current through a resonant (Breit-Wigner) level.
We review recent advances in the DNA sequencing based on the measurement of transverse electrical currents. Device configurations proposed in the literature are classified according to whether the molecular fingerprints appear as the major (Mode I) or perturbing (Mode II) current signals. Scanning tunneling microscope and tunneling electrode gap configurations belong to the former category, while the nanochannels with or without an embedded nanopore belong to the latter. The molecular sensing mechanisms of Modes I and II roughly correspond to the electron tunneling and electrochemical gating, …
Contact resistance and current crowding are important to nanoscale electrical contacts. In this paper, we present a self-consistent model to characterize partially overlapped parallel contacts with varying specific contact resistivity along the contact length. For parallel tunneling contacts formed between contacting members separated by a thin insulating gap, we examine the local voltage-dependent variation of potential barrier height and tunneling current along the contact length, by solving the lumped circuit transmission line model (TLM) equations coupled with the tunneling current self co…
In this thesis we derive a hydrodynamical model to describe the dynamics of density excitations localized at the edges of a Quantum Hall bar. In particular we show that the chiral Luttinger liquid model for the edges excitations can be derived from the coarse-graining and a lowest Landau level projection procedure without reference to the Quantum Hall effect. We use this model to calculate the Landauer-Buettiker conductances in generic experimental setups. In the absence of tunneling the ideal Hall conductance is recovered. When the tunneling between the edges is explicitely taken into account…
Stochastic switching-current distribution in a graphene-based Josephson junction exhibits a crossover from the classical to quantum regime, revealing the macroscopic quantum tunneling (MQT) of a Josephson phase particle at low temperatures. Microwave spectroscopy measurements indicate a multi-photon absorption process occurring via discrete energy levels in washboard potential well. The crossover temperature for MQT and the quantized level spacing are controlled with the gate voltage, implying its potential application to gate-tunable superconducting quantum bits.
We first report the all-electrical spin injection and detection in CoFe/MgO/moderately doped n-Ge contact at room temperature (RT), employing threeterminal Hanle measurements. A sizable spin signal of ~170 kΩ μm^2 has been observed at RT, and the analysis using a single-step tunneling model gives a spin lifetime of ~120 ps and a spin diffusion length of ~683 nm in Ge. The observed spin signal shows asymmetric bias and temperature dependences which are strongly related to the asymmetry of the tunneling process.
We propose a spin cell based on photon-assisted tunneling through a conventional semiconductor barrier. The Dresselhaus spin-orbit interaction is included to break the spin rotation symmetry. Due to the in-plane electric field induced asymmetric momentum distribution in one lead, continuous flows of spin currents are driven through a barrier by a AC field. The net charge current remains zero. The spin current via photon-assisted tunneling can be readily adjusted via tuning the AC frequency or the in-plane electric field. This device may function as an ideal spin cell to supply spin currents in…
Electrical contacts between nano-engineered systems are expected to constitute the basic building blocks of future nano-scale electronics. However, the accurate characterization and understanding of electrical contacts at the nano-scale is an experimentally challenging task. Here we employ low-temperature scanning tunneling spectroscopy to investigate the conductance of individual nano-contacts formed between flat Pb islands and their supporting substrates. We observe a suppression of the differential tunnel conductance at small bias voltages due to dynamical Coulomb blockade effects. The diff…
We present measurements of the electrical conductance $G$ at room temperature of mechanically controllable break junctions (MCBJ) fabricated from Au in different solvents (octane, DCM, DMSO, and toluene) and compare with measurements in air and vacuum. In the high conductance regime $G \agt G_0=2e^2/h$, the environment plays a minor role, as proven by the measured conductance histograms, which do not depend on the environment. In contrast, the environment significantly affects the electrical properties in the low conductance (tunneling) regime {$G << G_0$}. Here, we observe a systematic and re…
Excitons in optoelectronic devices have been generated through optical excitation, external carrier injection, or employing pre-existing charges. Here, we reveal a new way to electrically generate excitons in transition metal dichalcogenides (TMDs). The TMD is placed on top of a gold-hBN-graphene tunnel junction, outside of the tunneling pathway. This electrically driven device features a photoemission spectrum with a distinct peak at the exciton energy of the TMD. We interpret this observation as exciton generation by energy transfer from tunneling electrons, which is further supported by a t…
We study theoretically the impact of Zener tunneling on the charge-transport properties of quasi-metallic (Qm) carbon nanotubes (characterized by forbidden band gaps of few tens of meV). We also analyze the interplay between Zener tunneling and elastic scattering on defects. To this purpose we use a model based on the master equation for the density matrix, that takes into account the inter-band Zener transitions induced by the electric field (a quantum mechanical effect), the electron-defect scattering and the electron-phonon scattering. In presence of Zener tunnelling the Qm tubes support an…
Using the recently developed technique of microsoldering, we perform a systematic transport study of the influence of PMMA on graphene flakes revealing a doping effect of up to 3.8x10^12 1/cm^2, but a negligible influence on mobility and gate voltage induced hysteresis. Moreover, we show that the microsoldered graphene is free of contamination and exhibits a very similar intrinsic rippling as has been found for lithographically contacted flakes. Finally, we demonstrate a current induced closing of the previously found phonon gap appearing in scanning tunneling spectroscopy experiments, strongl…
We exploit a plasmon mediated two-step momentum downconversion scheme to convert low-energy tunneling electrons into propagating photons. Surface plasmon polaritons (SPPs) propagating along an extended gold nanowire are excited on one end by low-energy electron tunneling and are then converted to free-propagating photons at the other end. The separation of excitation and outcoupling proofs that tunneling electrons excite gap plasmons that subsequently couple to propagating plasmons. Our work shows that electron tunneling provides a non-optical, voltage-controlled and low-energy pathway for lau…
The interplay between discrete vibrational and electronic degrees of freedom directly influences the chemical and physical properties of molecular systems. This coupling is typically studied through optical methods such as fluorescence, absorption, and Raman spectroscopy. Molecular electronic devices provide new opportunities for exploring vibration-electronic interactions at the single molecule level. For example, electrons injected from a scanning tunneling microscope tip into a metal can excite vibrational excitations of a molecule in the gap between tip and metal. Here we show how current …
We study the electrical conductance $G$ and the thermopower $S$ of single-molecule junctions, and reveal signatures of different transport mechanisms: off-resonant tunneling, on-resonant coherent (ballistic) motion, and multi-step hopping. These mechanisms are identified by studying the behavior of $G$ and $S$ while varying molecular length and temperature. Based on a simple one-dimensional model for molecular junctions, we derive approximate expressions for the thermopower in these different regimes. Analytical results are compared to numerical simulations, performed using a variant of Büttik…
Pulsed electrostatic gating combined with capacitive charge sensing is used to perform excited state spectroscopy of an electrically isolated double-quantum-dot system. The tunneling rate of a single charge moving between the two dots is affected by the alignment of quantized energy levels; measured tunneling probabilities thereby reveal spectral features. Two pulse sequences are investigated, one of which, termed latched detection, allows measurement of a single tunneling event without repetition. Both provide excited-state spectroscopy without electrical contact to the double-dot system.
Analogous to radio- and microwave antennas, optical nanoantennas are devices that receive and emit radiation at optical frequencies. Until recently, the realization of electrically driven optical antennas was an outstanding challenge in nanophotonics. In this review we discuss and analyze recent reports in which quantum tunneling-specifically inelastic electron tunneling-is harnessed as a means to convert electrical energy into photons, mediated by optical antennas. To aid this analysis we introduce the fundamentals of optical antennas and inelastic electron tunneling. Our discussion is focuse…
We present a theoretical analysis aimed at understanding electrical conduction in molecular tunnel junctions. We focus on discussing the validity of coherent versus incoherent theoretical formulations for single-level tunneling to explain experimental results obtained under a wide range of experimental conditions, including measurements in individual molecules connecting the leads of electromigrated single-electron transistors and junctions of self-assembled monolayers (SAM) of molecules sandwiched between two macroscopic contacts. We show that the restriction of transport through a single lev…
We image the micro-electroluminescence (EL) spectra of self-assembled InAs quantum dots (QDs) embedded in the intrinsic region of a GaAs p-i-n diode and demonstrate optical detection of resonant carrier injection into a single QD. Resonant tunneling of electrons and holes into the QDs at bias voltages below the flat-band condition leads to sharp EL lines characteristic of individual QDs, accompanied by a spatial fragmentation of the surface EL emission into small and discrete light- emitting areas, each with its own spectral fingerprint and Stark shift. We explain this behavior in terms of Cou…
The electrical conductance of molecular junctions may strongly depend on the temperature, and weakly on molecular length, under two distinct mechanisms: phase-coherent resonant conduction, with charges proceeding via delocalized molecular orbitals, and incoherent thermally-assisted multi-step hopping. While in the case of coherent conduction the temperature dependence arises from the broadening of the Fermi distribution in the metal electrodes, in the latter case it corresponds to electron-vibration interaction effects on the junction. With the objective to distill the thermally-activated hopp…
We propose an objective and robust method to extract the electrical conductance of single molecules connected to metal electrodes from a set of measured conductance data. Our method roots in the physics of tunneling and is tested on octanedithiol using mechanically controllable break junctions. The single molecule conductance values can be deduced without the need for data selection.
This work investigates the feasibility of electrical valley filtering for holes in transition metal dichalcogenides. We look specifically into the scheme that utilizes a potential barrier to produce valley-dependent tunneling rates, and perform the study with both a k.p based analytic method and a recursive Green's function based numerical method. The study yields the transmission coefficient as a function of incident energy and transverse wave vector, for holes going through lateral quantum barriers oriented in either armchair or zigzag directions, in both homogeneous and heterogeneous system…
The performance of electronic and spintronic devices based on two-dimensional semiconductors (2D SC) is largely dependent on the quality and resistance of the metal/SC electrical contacts, as well as preservation of the intrinsic properties of the SC channel. Direct Metal/SC interaction results in highly resistive contacts due to formation of large Schottky barriers and considerably affects the properties of the 2D SC. In this work, we address these two important issues in monolayer $\mathrm{MoSe_2}$ Field-Effect transistors (FETs). We encapsulate the $\mathrm{MoSe_2}$ channel with hexagonal B…
The interplay of tunneling transport and carrier-mediated ferromagnetism in narrow semiconductor multi-quantum well structures containing layers of GaMnAs is investigated within a self-consistent Green's function approach, accounting for disorder in the Mn--doped regions and unwanted spin-flips at heterointerfaces on phenomenological ground. We find that the magnetization in GaMnAs layers can be controlled by an external electric bias. The underlying mechanism is identified as spin-selective hole tunneling in and out of the Mn-doped quantum wells, whereby the applied bias determines both hole …
Weyl semimetal is a recently discovered state of quantum matter, which generally possesses tilted energy dispersion. Here, we investigate the electron tunneling through a Weyl semimetal p-n-p junction. The angular dependence of electron tunneling exhibits an anomalous profile such that perfect transmission angles are shifted along the direction of the tilt. Coupling of the tilted dispersion and electrical potential within the barrier region gives rise to a transverse momentum shift, which is analogous to the transverse Lorentz displacement induced by magnetic barriers.
The effect of dc electrical stress and breakdown on Josephson and quasiparticle tunneling in Nb/Al/AlOx/Nb junctions with ultrathin AlOx barriers typical for applications in superconductor digital electronics has been investigated. The junctions' conductance at room temperature and current-voltage (I-V) characteristics at 4.2 K have been measured after the consecutive stressing of the tunnel barrier at room temperature. Electrical stress was applied using current ramps with increasing amplitude ranging from 0 to ~1000 Ic corresponding to voltages across the barrier up to 0.65 V where Ic is the…
The generation of highly-confined plasmons through far-field optical illumination appears to be impractical for technological applications due to their large energy-momentum mismatch with external light. Electrical generation of plasmons offers a possible solution to this problem, although its performance depends on a careful choice of material and geometrical parameters. Here we theoretically investigate graphene-based structures and show in particular the very different performance between (i) two layers of graphene separated by a dielectric and (ii) metal$|$insulator$|$graphene sandwiches a…
The Landauer formula for electrical conductance is simple but works remarkably well in mesoscopic systems. We propose a Landauer-like formula for calculating an escape rate out of a dissipative metastable well, the quantum Kramers rate.
We introduce a design of electrically isolated floating bilayer GaAs quantum wells (QW) in which application of a large gating voltage controllably and highly reproducibly induces charges that remain trapped in the bilayer after removal of the gating voltage. At smaller gate voltages, the bilayer is fully electrically isolated from external electrodes by thick insulating barriers. This design permits full control of the total and differential densities of two coupled 2D electron systems. The floating bilayer design provides a unique approach for studying systems inaccessible by simple transpor…
Electrically driven plasmon-polaritonic bistability in Dirac electron tunneling transistors
Columbia University（哥伦比亚大学）；ETH Zürich（苏黎世联邦理工学院）；National Institute for Materials Science（国立材料研究所）；Air Force Research Laboratory（空军研究实验室）；ICFO-Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology（巴塞罗那光子科学研究所，巴塞罗那科学技术研究院）；ICREA-Institució Catalana de Recerca i Estudis Avançats（加泰罗尼亚高级研究学院）
Klein tunneling, the perfect transmission of normally incident Dirac electrons across a potential barrier, has been widely studied in graphene and explored to design switches, albeit indirectly. We show that Klein tunneling maybe easier to detect for spin-momentum locked electrons crossing a PN junction along a three-dimensional topological insulator surface. In these topological insulator PN junctions (TIPNJs), the spin texture and momentum distribution of transmitted electrons can be measured electrically using a ferromagnetic probe for varying gate voltages and angles of current injection. …
An application of impedance measurement technique (IMT) for a detection of quantum tunneling in molecular structures is investigated. A charged particle which tunnels in a two-well potential is electrically coupled to a high-quality superconducting LC-circuit(tank) that makes possible a measurement of the electric susceptibility of the molecule at the resonant frequency of the tank. The real part of this susceptibility bears information about the tunneling rate through a measurable parameter - a phase angle between the tank voltage and a bias current applied to the tank. It is shown that the p…
We experimentally study the electrical transport properties of Ge/Si core/shell nanowire device with two superconducting leads in the Coulomb blockade regime. Anomalous zero field magnetoconductance peaks are observed for the first time at the gate voltages where Coulomb blockade oscillation peaks present. Many evidences indicate this feature is due to Andreev reflection enhanced phase coherent single hole tunneling through the quantum dot, which can be suppressed by an external magnetic field without destroying the superconducting states in the electrodes.
Two dimensional electronic systems under strong magnetic field form quantum Hall (QH) edge states, which propagate along the boundary of a sample with a dissipationless current. Engineering the pathway of these propagating one-dimensional chiral modes enables the investigation of quantum tunneling between adjacent QH states. Here, we report tunneling transport in spatially controlled networks of QH edge states in bilayer graphene. We observe resonant tunneling between co-propagating QH edges across barriers formed by electrically defining incompressible strips. Employing spectroscopic tunnelin…
We consider electrical transport through molecules with Heisenberg-coupled spins arranged in a ring structure in the presence of an easy-axis anisotropy. The molecules are coupled to two metallic leads and a gate. In the charged state of the ring, a Zener double-exchange mechanism links transport properties to the underlying spin structure. This leads to a remarkable contact-site dependence of the current, which for an antiferromagnetic coupling of the spins can lead to a total suppression of the zero-bias conductance when the molecule is contacted at adjacent sites.
We propose to measure Purcell effect by observing the current through a semeiconductor quantum dot embedded in a microcavity. An electron and a hole are injected separately into the quantum structure to form an exciton and then recombine radiatively. The stationary current is shown to be altered if one varies the cavity length or the exciton energy gap. Therefore, the Purcell effect can be observed experimentally by measuring the current through the quantum structure. In addition, we also find superradiance of excitons between quantum dots may also be observed in an electrical way.
We consider electrical transport through single molecules coupled to metal electrodes via tunneling barriers. Approximating the molecule by the Anderson impurity model as the simplest model which includes Coulomb charging effects, we extend the ``orthodox'' theory to expand current and shot noise systematically order by order in the tunnel couplings. In particular, we show that a combined measurement of current and shot noise reveals detailed information of the system even in the weak-coupling limit, such as the ratio of the tunnel-coupling strengths of the molecule to the left and right elect…
Quantum interference effects and decoherence mechanisms in single-molecule junctions are analyzed employing a nonequilibrium Green's function approach. Electrons tunneling through quasi-degenerate states of a nanoscale molecular junction exhibit interference effects. We show that electronic-vibrational coupling, inherent to any molecular junction, strongly quenches such interference effects. As a result, the electrical current can be significantly larger than without electronic-vibrational coupling. The analysis reveals that the quenching of quantum interference is particularly pronounced if t…
A gate electric field has a small but non-negligible effect on the phase of the valley-orbit coupling in Si quantum dots. Finite interdot tunneling between valley eigenstates in a double quantum dot is enabled by a small difference in the phase of the valley-orbit coupling between the two dots, and it in turn allows controllable rotations of two-dot valley eigenstates at a level anticrossing. We present a comprehensive analytical discussion of this process, with estimates for realistic structures.
We consider dc-electronic transport through a nanowire suspended between normal- and spin-polarized metal leads in the presence of an external magnetic field. We show that magnetomotive coupling between the electrical current through the nanowire and vibrations of the wire may result in self excitation of mechanical vibrations. The self-excitation mechanism is based on correlations between the occupancy of the quantized electronic energy levels inside the nanowire and the velocity of the nanowire. We derive conditions for the occurrence of the instability and find stable regimes of mechanical …
Based on the transmission coefficient of tunneling electrons, we have presented tunneling current and conductivity across a square-potential barrier for both graphene and $α$-$\mathcal{T}_3$ lattices under a linearly-polarized off-resonant dressing field. The presence of such a dressing field introduces an anisotropy factor in the energy dispersion of tunneling electrons so that the cross section of a Dirac-cone appears as elliptical. Consequently, the field-polarization controlled major axis of the ellipse will be misaligned with the normal direction of a barrier layer in the tunneling system…
We investigate the electrical transport through a system of benzene coupled to metal electrodes by electron tunneling. Using electronic structure calculations, a semi--quantitative model for the pi-electrons of the benzene is derived that includes general two-body interactions. After exact diagonalization of the benzene model the transport is computed using perturbation theory for weak electrode-benzene coupling (golden rule approximation). We include the effect of an applied electric field on the molecular states, as well as radiative relaxation. We predict a current collapse and strong negat…
We propose a method to electrically control electron spins in donor-based qubits in silicon. By taking advantage of the hyperfine coupling difference between a single-donor and a two-donor quantum dot, spin rotation can be driven by inducing an electric dipole between them and applying an alternating electric field generated by in-plane gates. These qubits can be coupled with exchange interaction controlled by top detuning gates. The qubit device can be fabricated deep in the silicon lattice with atomic precision by scanning tunneling probe technique. We have combined a large-scale full band a…
The short wavelength of graphene plasmons relative to the light wavelength makes them attractive for applications in optoelectronics and sensing. However, this property limits their coupling to external light and our ability to create and detect them. More efficient ways of generating plasmons are therefore desirable. Here we demonstrate through realistic theoretical simulations that graphene plasmons can be efficiently excited via electron tunneling in a sandwich structure formed by two graphene monolayers separated by a few atomic layers of hBN. We obtain plasmon generation rates of $\sim10^…
We consider a single electron confined within a quantum wire in a system of two electrostatically-induced QDs defined by nearby gates. The time-varying electric field, of single GHz frequency, perpendicular to the quantum wire, is used to induce the Rashba coupling and enable spin-dependent resonant tunneling of the electron between two adjacent potential wells with fidelity over 99.5%. This effect can be used for the high fidelity all-electrical electron-spin initialization or readout in the spin-based quantum computer. In contrast to other spin initialization methods, our technique can be pe…
The understanding of and control over light emission from quantum tunneling has challenged researchers for more than four decades due to the intricate interplay of electrical and optical properties in atomic scale volumes. Here we introduce a device architecture that allows for the disentanglement of electronic and photonic pathways - van der Waals quantum tunneling devices. The electronic properties are defined by a stack of two-dimensional atomic crystals whereas the optical properties are controlled via an external photonic architecture. In van der Waals heterostructure made of gold, hexago…
We demonstrate that a p-n junction created electrically in HgTe quantum wells with inverted band-structure exhibits interesting intraband and interband tunneling processes. We find a perfect intraband transmission for electrons injected perpendicularly to the interface of the p-n junction. The opacity and transparency of electrons through the p-n junction can be tuned by changing the incidence angle, the Fermi energy and the strength of the Rashba spin-orbit interaction. The occurrence of a conductance plateau due to the formation of topological edge states in a quasi-one-dimensional p-n junct…
We present a design for a tunneling-current-assisted scanning near-field microwave microscope. For stable operation at cryogenic temperatures, making a small and rigid microwave probe is important. Our coaxial resonator probe has a length of approxomately 30 mm and can fit inside the 2-inch bore of a superconducting magnet. The probe design includes an insulating joint, which separates DC and microwave signals without degrading the quality factor. By applying the SMM to the imaging of an electrically inhomogeneous superconductor, we obtain the spatial distribution of the microwave response wit…
The recent development of all-electrical electron spin resonance (ESR) in a scanning tunneling microscope (STM) setup has opened the door to vast applications. Despite the fast growing number of experimental works on STM-ESR, the fundamental principles remains unclear. By using a cotunneling picture, we show that the spin resonance signal can be explained as a time-dependent variation of the tunnel barrier induced by the alternating electric driving field. We demonstrate how this variation translates into the resonant frequency response of the direct current. Our cotunneling theory explains th…
