高Q值薄膜微谐振器的材料阻尼控制
Control of Material Damping in High-Q Membrane Microresonators
摘要：
研究了铝/氮化硅双层膜的力学品质因数。通过在超高Q值Si 3 N4薄膜上涂上一层损耗更大的金属，我们可以精确地测量材料损耗对大范围频率上的张紧谐振器模式的Q值的影响。我们开发了一个理论模型，解释我们的结果，并预测阻尼可以显着减少图案化的金属膜。利用这种图案化，我们在室温下制备了Al-Si_3 N_4薄膜。我们的工作阐明了材料损耗在薄膜谐振器的Q值中的作用，并为光-电-机量子接口的混合机械振荡器的设计提供了信息。
英文摘要：
We study the mechanical quality factors of bilayer aluminum/silicon-nitride membranes. By coating ultrahigh-Q Si3N4 membranes with a more lossy metal, we can precisely measure the effect of material loss on Q's of tensioned resonator modes over a large range of frequencies. We develop a theoretical model that interprets our results and predicts the damping can be reduced significantly by patterning the metal film. Using such patterning, we fabricate Al-Si3N4 membranes with ultrahigh Q at room temperature. Our work elucidates the role of material loss in the Q of membrane resonators and informs the design of hybrid mechanical oscillators for optical-electrical-mechanical quantum interfaces.
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