具有优化沟道形态的外延石墨烯FET的增强性能
Enhanced Performance in Epitaxial Graphene FETs with Optimized Channel Morphology
摘要：
这封信报道了表面形态对在SiC衬底上合成的外延石墨烯膜上形成的石墨烯FET的载流子传输和RF性能的影响。这种石墨烯表现出宽度在3-5 μm之间的长平台结构和高度为10 \pm 2 nm的台阶。虽然在室温下在单个石墨烯平台域中获得了在1 e12 cm-2的载流子密度下高于3000 cm 2/Vs的载流子迁移率，但是台阶边缘可以导致~21 kΩ.μm的邻近台阶电阻。通过定向晶体管布局，使得整个沟道位于单个石墨烯平台内，并且降低与沟道的未选通部分相关联的接入电阻，对于沟道长度为210 nm的石墨烯FET，实现了高于200 GHz的截止频率，这是迄今为止在外延石墨烯上报道的最高值。
英文摘要：
This letter reports the impact of surface morphology on the carrier transport and RF performance of graphene FETs formed on epitaxial graphene films synthesized on SiC substrates. Such graphene exhibits long terrace structures with widths between 3-5 μm and steps of 10\pm2 nm in height. While a carrier mobility above 3000 cm2/Vs at a carrier density of 1e12 cm-2 is obtained in a single graphene terrace domain at room temperature, the step edges can result in a vicinal step resistance of ~21 kΩ.μm. By orienting the transistor layout so that the entire channel lies within a single graphene terrace, and reducing the access resistance associated with the ungated part of the channel, a cut-off frequency above 200 GHz is achieved for graphene FETs with channel lengths of 210 nm, which is the highest value reported on epitaxial graphene thus far.
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