Giorgio De Simoni, Lukas Mahler, Vincenzo Piazza, Alessandro Tredicucci, Christine A. Nicoll, Harvey E. Beere, David A. Ritchie, Fabio Beltram
We present a planar laser diode based on a simple fabrication scheme compatible with virtually any geometry accessible by standard semiconductor lithography technique. We show that our lasers exhibit ~1 GHz -3dB-modulation-bandwidth already in this prototypical implementation. Directions for a significant speed increase are discussed.
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Operation of semiconductor lasers in the 20--50 $μ$m wavelength range is hindered by strong non-radiative recombination in the interband laser diodes, and strong lattice absorption in GaAs-based quantum cascade structures. Here, we propose an electrically pumped laser diode based on multiple HgTe quantum wells with band structure engineered for Auger recombination suppression. Using a comprehensive model accounting for carrier drift and diffusion, electron and hole capture in quantum wells, Auger recombination, and heating effects, we show the feasibility of lasing at $λ= 26...30$ $μ$m at temp…
We propose optical phonon lasing for a double quantum dot (DQD) fabricated in a semiconductor substrate. We show that the DQD is weakly coupled to only two LO phonon modes that act as a natural cavity. The lasing occurs for pumping the DQD via electronic tunneling at rates much higher than the phonon decay rate, whereas an antibunching of phonon emission is observed in the opposite regime of slow tunneling. Both effects disappear with an effective thermalization induced by the Franck-Condon effect in a DQD fabricated in a carbon nanotube with a strong electron-phonon coupling.
We theoretically propose optical phonon lasing in a double quantum dot (DQD) fabricated on a semiconductor substrate. No additional cavity or resonator is required. An electron in the DQD is found to be coupled to only two longitudinal optical phonon modes that act as a natural cavity. When the energy level spacing in the DQD is tuned to the phonon energy, the electron transfer is accompanied by the emission of the phonon modes. The resulting non-equilibrium motion of electrons and phonons is analyzed by the rate equation approach based on the Born-Markov-Secular approximation. We show that th…
Diode is a key device in electronics: the charge current can flow through the device under a forward bias, while almost no current flows under a reverse bias. Here we propose a corresponding device in spintronics: the spin-current diode, in which the forward spin current is large but the reversed one is negligible. We show that the lead/ferromagnetic quantum dot/lead system and the lead/ferromagnetic semiconductor/lead junction can work as spin-current diodes. The spin-current diode, a low dissipation device, may have important applications in spintronics, as the conventional charge-current di…
In this paper we carry out a theoretical and experimental study of the nature of graphene/semiconductor Schottky contact. We present a simple and parameter-free carrier transport model of graphene/semiconductor Schottky contact derived from quantum statistical theory, which is validated by the quantum Landauer theory and first-principle calculations. The proposed model can well explain experimental results for samples of different types of graphene/semiconductor Schottky contact.
We present a time-domain model for the simulation of light-matter interaction in semiconductors in arbitrary geometries and across a wide range of excitation conditions. The electromagnetic field is treated classically using the finite-difference time-domain method. The polarization and occupation numbers of the semiconductor material are described using the semiconductor Bloch equations including many-body effects in the screened Hartree-Fock approximation. Spontaneous emission noise is introduced using stochastic driving terms. As an application of the model, we present simulations of the dy…
We observed qualitatively dissimilar frequency dependence of negative capacitive response under high charge injection in two sets of junction diodes which are functionally different from each other i.e. electroluminescent diodes and non-luminescent Si-based diodes. Using the technique of bias-activated differential capacitance response, we investigated the mutual dynamics of different rate processes in different diodes. We explain these observations as the mutual competition of fast and slow electronic transition rates albeit differently. This study provides a better understanding of the physi…
The proper understanding of semiconductor devices begins at the metal-semiconductor interface. The metal/semiconductor interface itself can also be an important device, as Schottky junctions often forms when the doping in the semiconductors is low. Here, we extend the analysis of metal-silicon Schottky junctions by using graphene, an atomically thin semimetal. We show that a fundamentally new transport model is needed to describe the graphene-silicon Schottky junction. While the current-voltage behavior follows the celebrated ideal diode behavior, the details of the diode characteristics is be…
The current (voltage) responsivity of the superlattice-based diode detectors in the terahertz frequency band which includes the region of the polar optical phonon frequencies has been analyzed theoretically. Within the framework of the equivalent circuit approach an electro-dynamical model which allows one to analyze the responsivity taking into account the plasmon polariton excitation both in the substrate and in the contact layers of the diodes has been suggested. It has been shown that the presence of the plasmon polariton excitation gives rise to strong features in the frequency dependence…
We demonstrate room-temperature spin-polarized ultrafast ($\sim$10 ps) lasing in a highly optically excited GaAs microcavity. This microcavity is embedded with InGaAs multiple quantum wells in which the spin relaxation time is less than 10 ps. The laser radiation remains highly circularly polarized even when excited by nonresonant elliptically polarized light. The lasing energy is not locked to the bare cavity resonance, and shifts $\sim$10 meV as a function of the photoexcited density. Such spin-polarized lasing is attributed to a spin-dependent stimulated process of correlated electron-hole …
Magnetic $p$-$n$ junction diodes are fabricated to investigate spin-polarized electron transport. The injection of spin-polarized electrons in a semiconductor is achieved by driving a current from a ferromagnetic injector (Fe), into a bulk semiconductor ($n$-GaAs) via schottky contact. For detection, a diluted magnetic semiconductor ($p$-GaMnAs) layer is used. Clear magnetoresistance was observed only when a high forward bias was applied across the $p$-$n$ junction.
We demonstrate sequential lasing at two well-separated energies in a highly photoexcited planar microcavity at room temperature. Two spatially overlapped lasing states with distinct polarization properties appear at energies more than 5 meV apart. Under a circularly polarized nonresonant 2 ps pulse excitation, a sub-10-ps transient circularly polarized high-energy (HE) state emerges within 10 ps after the pulse excitation. This HE state is followed by a pulsed state that lasts for 20--50 ps at a low energy (LE) state. The HE state is highly circularly polarized as a result of a spin-preserving…
Non-epitaxial perovskite polariton laser diode operating under direct current
本文提出将溶液生长CsPbBr3微片与单壁碳纳米管电极集成并嵌入光学微腔，在8 K和65 μA直流下实现强耦合区极化激元激光。
Photon Bose-Einstein condensation and lasing in semiconductor cavities
本文利用现有理论框架，在半导体腔中重新审视驱动-耗散光子玻色-爱因斯坦凝聚，与激射体系对比热化品质因数、阈值定义及系统涨落，旨在阐明两者区别。
Studies of spin manipulation in semiconductors has benefited from the possibility to grow these materials in high quality on top of optically active III-V systems. The induced electroluminescence in these layered semiconductor heterostructures has been used for a reliable spin detection. In semiconductors with strong spin-orbit interaction, the sensitivity of vertical devices may be insufficient, however, because of the sepration of the spin aligner part and the spin detection region by one or more heterointerfaces and becuse of the short spin coherence length. Here we demostrate that higly se…
In the past decade graphene has been one of the most studied material for several unique and excellent properties. Due to its two dimensional nature, physical and chemical properties and ease of manipulation, graphene offers the possibility of integration with the exiting semiconductor technology for next-generation electronic and sensing devices. In this context, the understanding of the graphene/semiconductor interface is of great importance since it can constitute a versatile standalone device as well as the building-block of more advanced electronic systems. Since graphene was brought to t…
A Schottky diode integrated into a terahertz quantum cascade laser waveguide couples directly to the internal laser fields. In a multimode laser, the diode response is correlated with both the instantaneous power and the coupling strength to the diode of each lasing mode. Measurements of the rectified response of diodes integrated in two quantum cascade laser cavities at different locations indicate that the relative diode position strongly influences the laser-diode coupling.
We predict bistability in the Curie temperature-voltage characteristic of double barrier resonant-tunneling structures with dilute ferromagnetic semiconductor quantum wells. Our conclusions are based on simulations of electrostatics and ballistic quantum transport combined with a mean-field theory description of ferromagnetism in dilute magnetic semiconductors.
We study theoretically interaction of optically-pumped excitons with acoustic waves in planar semiconductor nanostructures in the strongly nonlinear regime. We start with the multimode optomechanical lasing regime for optical pump frequency {above} the exciton resonance and demonstrate broadband chaotic-like lasing spectra. We also predict formation of propagating optomechanical domain walls driven by optomechanical nonlinearity for the optical pump {below} the exciton resonance. Stability conditions for the domain walls are examined analytically and are in agreement with direct numerical simu…
In a recent letter [Phys. Rev. Lett. 110, 177406 (2013)], presenting a spectroscopic study of the electrons emitted from the GaN p-cap of a forward-biased InGaN/GaN light-emitting diode (LED), the authors observed at least two distinct peaks in the electron energy distribution curves (EDCs), separated by about 1.5 eV, and concluded that the only viable explanation for the higher-energy peak was Auger recombination in the LED active region. We present full-band Monte Carlo simulations suggesting that the higher-energy peaks in the measured EDCs are probably uncorrelated with the carrier distrib…
We predict that the Curie temperature of a ferromagnetic resonant tunneling diode will decrease abruptly, by approximately a factor of two, when the downstream chemical potential falls below the quantum well resonance energy. This property follows from elementary quantum transport theory notions combined with a mean field description of diluted magnetic semiconductor ferromagnetism. We illustrate this effect by solving coupled non-equilibrium Green's function, magnetic mean-field, and electrostatic Poisson equations self-consistently to predict the bias voltage and temperature dependence of th…
Metal-semiconductor interfaces, known as Schottky junctions, have long been hindered by defects and impurities. Such imperfections dominate the electrical characteristics of the junction by pinning the metal Fermi energy. We report measurements on a boron nitride encapsulated graphene-tungsten diselenide (WSe$_2$) Schottky junction which exhibits ideal diode characteristics and a complete lack of Fermi-level pinning. The Schottky barrier height of the device is rigidly tuned by electrostatic gating of the WSe$_2$, enabling experimental verification of the Schottky-Mott limit in a single device…
Observations of polariton condensation in semiconductor microcavities suggest that polaritons can be exploited as a novel type of laser with low input-power requirements. The low-excitation regime is approximately equivalent to thermal equilibrium, and a higher excitation results in more dominant nonequilibrium features. Although standard photon lasing has been experimentally observed in the high excitation regime, e-h pair binding can still remain even in the high-excitation regime theoretically. Therefore, the photoluminescence with a different photon lasing mechanism is predicted to be diff…
We report novel graphene nanoribbon (GNR)/semiconductor nanowire (SNW) heterojunction light-emitting diodes (LEDs) for the first time. The GNR and SNW have a face-to-face contact structure, which has the merit of bigger active region. ZnO, CdS, and CdSe NWs were employed in our case. At forward biases, the GNR/SNW heterjunction LEDs could emit light with wavelengths varying from ultraviolet (380 nm) to green (513 nm) to red (705 nm), which were determined by the band-gaps of the involved SNWs. The mechanism of light emitting for the GNR/SNW heterojunction LED was discussed. Our approach can ea…
Spin-controlled lasers are highly interesting photonic devices and have been shown to provide ultra-fast polarization dynamics in excess of 200 GHz. In contrast to conventional semiconductor lasers their temporal properties are not limited by the intensity dynamics, but are governed primarily by the interaction of the spin dynamics with the birefringent mode splitting that determines the polarization oscillation frequency. Another class of modern semiconductor lasers are high-beta emitters which benefit from enhanced light-matter interaction due to strong mode confinement in low-mode-volume mi…
Semiconductor nanowire lasers can produce guided coherent light emission with miniaturized geometry, bringing about new possibility for a variety of applications including nanophotonic circuits, optical sensing, and on-chip and chip-to-chip optical communications. Here, we report on the realization of single-mode room-temperature lasing from 890 nm to 990 nm utilizing a novel design of single nanowires with GaAsSb-based multiple superlattices as gain medium under optical pumping. The wavelength tunability with comprehensively enhanced lasing performance is shown to result from the unique nanow…
We experimentally study the transport features of electrons in a spin-diode structure consisting of a single semiconductor quantum dot (QD) weakly coupled to one nonmagnetic (NM) and one ferromagnetic (FM) lead, in which the QD has an artificial atomic nature. A Coulomb stability diamond shows asymmetric features with respect to the polarity of the bias voltage. For the regime of two-electron tunneling, we find anomalous suppression of the current for both forward and reverse bias. We discuss possible mechanisms of the anomalous current suppression in terms of spin blockade via the QD/FM inter…
A challenge of bridging the terahertz gap with semiconductor lasers faces an inevitable problem of enhanced non-radiative Auger recombination with reduction of photon energy. We show that this problem can be mitigated in mercury-cadmium-telluride quantum wells (HgCdTe QWs) wherein the Auger process is suppressed due to formation of quasi-relativistic electron-hole dispersion imposing strong energy-momentum restrictions on recombining carriers. Such dispersion is formed upon interaction of topological states at the two QW interfaces. We characterize the lasing properties of HgCdTe QWs quantitat…
The negative differential resistance (NDR) tunnel diodes are promising alternative devices for beyond-CMOS computing as they offer several potential applications when integrated with transistors. We propose a novel semiconductor-free NDR tunnel diode concept that exhibits an ultra-high peak-to-valley current ratio (PVCR) value. Our proposed NDR diode consists of two cold metal electrodes separated by a thin insulating tunnel barrier. The NDR effect stems from the unique electronic band structure of the cold metal electrodes, i.e., the width of the isolated metallic bands around the Fermi level…
Two-dimensional (2D) semiconductors are promising material candidates for next-generation nanoelectronics. However, there are fundamental challenges related to their metal-semiconductor (MS) contacts which limit the performance potential for practical device applications. In this work, we exploit 2D monolayer hexagonal boron nitride (h-BN) as an ultrathin decorating layer to form a metal-insulator-semiconductor (MIS) contact, and demonstrate a novel diode-like selective enhancement of the carrier transport through it. Compared to the conventional MS contact, the MIS contact dominated by both t…
The ideal diode is a theoretical concept that completely conducts the electric current under forward bias without any loss and that behaves like a perfect insulator under reverse bias. However, real diodes have a junction barrier that electrons have to overcome and thus they have a threshold voltage $V_T$, which must be supplied to the diode to turn it on. This threshold voltage gives rise to power dissipation in the form of heat and hence is an undesirable feature. In this work, based on half-metallic magnets and spin-gapless semiconductors we propose a diode concept that does not have a junc…
We propose to pump semiconductor quantum dots with surface acoustic waves which deliver an alternating periodic sequence of electrons and holes. In combination with a good optical cavity such regular pumping could entail anti-bunching and sub-Poissonian photon statistics. In the bad-cavity limit a train of equally spaced photons would arise.
We report the demonstration of hybrid high-Tc-superconductor-semiconductor tunnel junctions, enabling new interdisciplinary directions in condensed matter research. The devices were fabricated by our newly-developed mechanical bonding technique, resulting in high-Tc-semiconductor planar junctions acting as superconducting tunnel diodes. Tunneling-spectra characterization of the hybrid junctions of Bi2Sr2CaCu2O8+δ combined with bulk GaAs, or a GaAs/AlGaAs quantum well, exhibits excess voltage and nonlinearity - in good agreement with theoretical predictions for a d-wave superconductor-normal ma…
In this work we present silicon process compatible, stable and reliable ($>10^{8}$cycles), high non-linearity ratio at half-read voltage ($>5\times 10^{5}$), high speed ($<60ns$) low operating voltage ($<2V$) back-to-back Schottky diodes. Materials choice of electrode, thickness of semiconductor layer and doping level are investigated by numerical simulation, experiments and current-voltage equations to give a general design consideration when back-to-back Schottky diodes are used as selector device for Resistive Random Access Memory(RRAM) arrays.
We describe a new means for electrically creating spin polarization in semiconductors. In contrast to spin injection of electrons by tunneling through a reverse-biased Schottky barrier, we observe spin accumulation at the metal/semiconductor interface of forward-biased ferromagnetic Schottky diodes, which is consistent with a theory of spin-dependent reflection off the interface. Spatiotemporal Kerr microscopy is used to image the electron spin and the resulting dynamic nuclear polarization that arises from the non equilibrium carrier polarization.
High-$β$ lasing in photonic-defect semiconductor-dielectric hybrid microresonators with embedded InGaAs quantum dots
本文提出一种基于掩埋光子缺陷的准平面半导体-介质混合微腔设计，在嵌入InGaAs量子点的腔中实现低至0.28 μm³的模式体积和高β激射，无需复杂横向纳米加工，并展现出优异的温度稳定性。
The realization of quantum computers and quantum Internet requires not only quantum gates and quantum memories, but also transistors at single-photon levels to control the flow of information encoded on single photons. Single-photon transistor (SPT) is an optical transistor in the quantum limit, which uses a single photon to open or block a photonic channel. In sharp contrast to all previous SPT proposals which are based on single-photon nonlinearities, here I present a novel design for a high-gain and high-speed (up to THz) SPT based on a linear optical effect - giant circular birefringence (…
Heterojunctions between three-dimensional (3D) semiconductors with different bandgaps are the basis of modern light-emitting diodes, diode lasers, and high-speed transistors. Creating analogous heterojunctions between different two-dimensional (2D) semiconductors would enable band engineering within the 2D plane and open up new realms in materials science, device physics and engineering. Here we demonstrate that seamless high-quality in-plane heterojunctions can be grown between the 2D monolayer semiconductors MoSe2 and WSe2. The junctions, grown by lateral hetero-epitaxy using physical vapor …
We investigate the current-voltage characteristics of a II-VI semiconductor resonant-tunneling diode coupled to a diluted magnetic semiconductor injector. As a result of an external magnetic field, a giant Zeeman splitting develops in the injector, which modifies the band structure of the device, strongly affecting the transport properties. We find a large increase in peak amplitude accompanied by a shift of the resonance to higher voltages with increasing fields. We discuss a model which shows that the effect arises from a combination of three-dimensional incident distribution, giant Zeeman s…
Wetzelaer, Koster, and Blom [PRL 107, 066605] recently observed that the classic Einstein relation $\frac{D}μ=\frac{kT}{q}$ is still valid in disordered semiconductors in thermal(quasi)equilibrium by studying the diffusion-driven currents of single-carrier diodes. This is in contrast to the previous theoretical prediction [2] and experiment observation from Leo et.al. [3] where the Einstein relation increases with 1/T. We will discuss the reason for this discrepancy here and suggest that one-carrier diodes experiment might nor be suitable for verifying Einstein relation in organic semiconducto…
Single photon detectors are key for time-correlated photon counting applications [1] and enable a host of emerging optical quantum information technologies [2]. So far, the leading approach for continuous and efficient single-photon detection in the optical domain has been based on semiconductor photodiodes [3]. However, there is a paucity of efficient and continuous single-photon detectors in the microwave regime, because photon energies are four to five orders of magnitude lower therein and conventional photodiodes do not have that sensitivity. Here we tackle this gap and demonstrate how iti…
Rectification of heat flow via a thermal diode is not only of fundamental interest, but can also enable a range of novel applications in thermal management and energy conversion. However, despite decades of extensive research, large rectification ratios of practical importance have yet to be demonstrated. Here, we theoretically achieve giant rectification ratios (3 to almost 5 orders of magnitude) by leveraging near-field radiative thermal transport between two parallel planes. Guided by a rational design approach centering on the electromagnetic local density of states (LDOS), we employ a thi…
Recently demonstrated metal-semiconductor heterojunctions with few-atom thickness show their promise as 2D Schottky contacts for future integrated circuits and nanoelectronics. The theory for 3D Schottky contacts, however, fails on these low-dimensional systems. Here, we propose a new model that yields carrier distribution and potential profile across the 2D metal-semiconductor heterojunction under the equilibrium condition, based on the input from first-principle calculations. Our calculation also suggests that, at the same forward bias, the current density of a stack of 2D graphene-phosphore…
We investigate theoretically the many-emitter phonon laser based on optically driven semiconductor quantum dots within an acoustic nanocavity. We map the phonon laser Hamiltonian to a Tavis-Cummings type interaction with an unexpected additional many-emitter energy shift. This many-emitter interaction with the cavity mode results in a variety of resonances dependent on the number of participating emitters. We show that the many-emitter phonon laser also includes the single emitter resonance besides these collective phenomena. However, we obtain a high quantum yield addressing these collective …
We develop in this work a simple qualitative quantum electron transport model, in the strong light-matter coupling regime under dipole approximation, able to capture polaritonic signatures in the time-dependent electrical current. The effect of the quantized electromagnetic field in the displacement current of a resonant tunneling diode inside an optical cavity is analyzed. The original peaks of the bare electron transmission coefficient split into two new peaks due to the resonant electron-photon interaction, leading to coherent Rabi oscillations among the polaritonic states that are develope…
We study the laser regime of terahertz (THz) emission from a semiconductor microcavity in the strong coupling regime, where optical transitions between upper and lower exciton-polariton modes are allowed due to the mixing of the upper mode with one of the dark exciton states. Using a system of master-Boltzmann equations describing both polariton modes and the THz mode, we calculate the first and second order coherences and the spectral shape of THz emission. This analysis shows that THz lasing in microcavities is possible provided that the system is embedded in a good THz cavity, that the opti…
The integration of two-dimensional materials such as transition metal dichalcogenides with bulk semiconductors offer interesting opportunities for 2D/3D heterojunction-based novel device structures without any constraints of lattice matching. By exploiting the favorable band alignment at the GaN/MoS2 heterojunction, an Esaki interband tunnel diode is demonstrated by transferring large area, Nb-doped, p-type MoS2 onto heavily n-doped GaN. A peak current density of 446 A/cm2 with repeatable room temperature negative differential resistance, peak to valley current ratio of 1.2, and minimal hyster…
Room-temperature, continuous wave lasing in planar microcavities with quantum dots
研究在室温下利用平面微腔实现956nm波长连续波激光发射，通过低吸收率镜面和量子点结构实现了高阈值功率密度和质量因子，验证了平面半导体微腔的高效散热性能。
Lasing of Quantum-Dot Micropillar Lasers under Elevated Temperatures
研究通过数值模拟分析了微柱激光器在光学泵浦下的微腔参数，发现混合介电-半导体顶部镜结构能显著提高质量因子，实验显示在130K时达到激光阈值，220K时仍能实现激光发射。
Two-dimensional semiconductors are excellent candidates for next-generation electronics and optoelec-tronics thanks to their electrical properties and strong light-matter interaction. To fabricate devices with optimal electrical properties, it is crucial to have both high-quality semiconducting crystals and ideal con-tacts at metal-semiconductor interfaces. Thanks to the mechanical exfoliation of van der Waals crystals, atomically-thin high-quality single-crystals can easily be obtained in a laboratory. However, conventional metal deposition techniques can introduce chemical disorder and metal…
The recent demonstration of resonant tunneling transport in nitride semiconductors has led to an invigorated effort to harness this quantum transport regime for practical applications. In polar semiconductors, however, the interplay between fixed polarization charges and mobile free carriers leads to asymmetric transport characteristics. Here, we investigate the possibility of using degenerately doped contact layers to screen the built-in polarization fields and recover symmetric resonant injection. Thanks to a high doping density, negative differential conductance is observed under both bias …
Scalability and foundry compatibility (as for example in conventional silicon based integrated computer processors) in developing quantum technologies are exceptional challenges facing current research. Here we introduce a quantum photonic technology potentially enabling large scale fabrication of semiconductor-based, site-controlled, scalable arrays of electrically driven sources of polarization-entangled photons, with the potential to encode quantum information. The design of the sources is based on quantum dots grown in micron-sized pyramidal recesses along the crystallographic direction (1…
In this work, I propose a scheme about a single graphene nanoribbon (GNR) emitter in a microcavity, and focus on a fully-quantum-mechanical treatment model with the excitonic interaction included to investigate the photon properties and lasing action. When the single armchair-edged GNRs (AGNRs) microcavity system is pumped, the exciton-photon coupling provides more photons and enhances the photon emission process, making it essentially a lasing object. The theoretical results demonstrated that single AGNR in a semiconductor microcavity system maybe serve as a nanolaser with ultralow lasing thr…
We present Floquet-Keldysh non-equilibrium dynamical mean field calculations (DMFT) with an iterative perturbative solver (IPT) for high pump-power induced Stark states yielding a closing gap within semiconductor bulk and nano-cavities. Our model predicts unusual broadening of bands in systems like ZnO random lasers. This can be explained as an exciton-polariton coupling within the single crystalline pillar meeting the Mie resonance condition. Extraordinary enhancement of the lifetime of electronic states within the gap can lead to stable lasing modes and gain narrowing.
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