通过原子层沉积的ZnCoO膜-生长温度对钴分布均匀性的影响
ZnCoO Films by Atomic Layer Deposition - influence of a growth temperature on uniformity of cobalt distribution
摘要：
本文报道了用原子层沉积法（ALD）制备的ZnCoO薄膜的结构、电学和磁学性质。作为锌前体，我们应用二甲基锌或二乙基锌和乙酰丙酮钴（II）作为钴前体。使用这些前体使我们的生长温度显着降低到300 ℃及以下，这被证明是非常重要的均匀薄膜的ZnCoO的生长。利用SIMS、SEM、EDS、XRD、AFM、霍尔效应和SQUID等测试手段对所制备的ZnCoO薄膜的结构、电学和磁学性能进行了分析。
英文摘要：
We report on the structural, electrical and magnetic properties of ZnCoO thin films grown by Atomic Layer Deposition (ALD) method using reactive organic precursors of zinc and cobalt. As a zinc precursor we applied either dimethylzinc or diethylzinc and cobalt (II) acetyloacetonate as a cobalt precursor. The use of these precursors allowed us the significant reduction of a growth temperature to 300oC and below, which proved to be very important for the growth of uniform films of ZnCoO. Structural, electrical and magnetic properties of the obtained ZnCoO layers will be discussed based on the results of SIMS, SEM, EDS, XRD, AFM, Hall effect and SQUID investigations.
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