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arXiv 1107.1807cond-mat.mtrl-sci
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锑掺杂氧化锡$(Sn_{1-x}Sb_{x}O_{2-δ})$的合成及结构/微结构特征

Synthesis and structural/microstructural characteristics of antimony doped tin oxide $(Sn_{1-x}Sb_{x}O_{2-δ})$

Rita Singh, Sushant Gupta, B. Das

摘要:

采用固相反应法合成了x = 0.00,0.10,0.20,0.30的$(Sn_{1-x}Sb_{x}O_{2-δ})$的体相样品。采用X射线粉末衍射(XRD)、扫描电子显微镜(SEM)、透射电子显微镜(TEM)和紫外-可见光谱(UV-Vis)对样品进行了表征。X射线衍射图表明,$(Sn_{1-x}$ $Sb_{x}O_{2-δ})$的总结构/相不随锑(Sb)的取代而改变,直至x = 0.30。用SEM的表面形态学检查揭示了这样一个事实,即锑掺杂样品中的晶粒尺寸大于未掺杂样品的晶粒尺寸,因此晶粒之间的孔隙/空隙随着Sb浓度增加至0.30。未掺杂样品的TEM图像表明,$SnO_{2}$颗粒的直径范围为25 - 120 nm,大多数颗粒为立方体或球形。随着锑含量的增加,纳米立方体/球转化为微米立方体/球。对于360 - 800 nm波长范围,随着锑(Sb)浓度的增加,$Sn_{1-x}Sb_{x}O_{2-δ}$样品的反射率增加,而这些样品的吸光度降低。利用紫外-可见吸收光谱对Sb掺杂- $SnO_{2}$样品的能带结构进行了研究。当Sb浓度增加时,发现样品的带隙从3.367 eV增加到3.558 eV。

英文摘要:

Bulk samples of $(Sn_{1-x}Sb_{x}O_{2-δ})$ with x = 0.00, 0.10, 0.20, 0.30 are synthesized by solid-state reaction route. Samples were characterized by X-ray powder diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and UV-Vis spectroscopy. The x-ray diffraction patterns indicate that the gross structure/phase of $(Sn_{1-x}$ $Sb_{x}O_{2-δ})$ do not change with the substitution of antimony (Sb) up to x = 0.30. The surface morphological examination with SEM revealed the fact that the grain size in the antimony doped sample is larger than that of undoped one and hence pores/voids between the grains increase with Sb concentration up to 0.30. TEM image of undoped sample indicates that the $SnO_{2}$ grains have diameters ranging from 25 to 120 nm and most grains are in cubic or spherical shape. As antimony content increases, the nanocubes/spheres are converted into microcubes/spheres. The reflectance of $Sn_{1-x}Sb_{x}O_{2-δ}$ samples increases whereas absorbance of these samples decreases with the increased concentration of antimony (Sb) for the wavelength range 360 - 800 nm. The energy bandgap of Sb doped - $SnO_{2}$ samples were obtained from optical absorption spectra by UV-Vis absorption spectroscopy. Upon increasing the Sb concentration the bandgap of the samples was found to increase from 3.367 eV to 3.558 eV.

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