面内阻抗谱研究VO2薄膜金属-绝缘体转变附近的电容网络
Evidence for a capacitor network near the metal insulator transition in VO2 thin films probed by in-plane impedance spectroscopy
摘要：
在高质量的二氧化钒（VO 2）薄膜中进行了阻抗谱测量。这种技术使我们能够调查的电阻和电容的贡献附近的金属-绝缘体转变（MIT）的介电响应。从室温到334 K，我们的薄膜都表现出非理想的RC行为。发现在该区域中总电容减小，这可能是由于界面效应。在MIT以上，系统表现得像预期的金属，并且需要修改的等效电路来充分描述阻抗数据。在MIT周围，观察到总电容的增加。
英文摘要：
Impedance spectroscopy measurements were performed in high quality Vanadium dioxide (VO2) thin films. This technique allows us investigate the resistive and capacitive contribution to the dielectric response near the metal-insulator transition (MIT). A non ideal RC behavior was found in our films from room temperature up to 334 K. A decrease of the total capacitance was found in this region, possibly due to interface effects. Above the MIT, the system behaves like a metal as expected, and a modified equivalent circuit is necessary to describe the impedance data adequately. Around the MIT, an increase of the total capacitance is observed.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
