arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 1105.4141cond-mat.str-elcond-mat.mes-hallcond-mat.mtrl-sci
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量子线中的调制Rashba相互作用:自旋和电荷动力学

Modulated Rashba interaction in a quantum wire: Spin and charge dynamics

Mariana Malard, Inna Grusha, G. I. Japaridze, Henrik Johannesson

摘要:

最近表明,当调制的波数与量子线中电子的费米波长相称时,量子线中空间调制的Rashba自旋轨道耦合驱动从金属态到绝缘态的转变。有人建议,这种效应可能会在未来的自旋晶体管设计中投入实际使用。在本文中,我们重新审视这个问题,并提出了一个详细的分析基础物理。首先,我们探讨了如何建立的电荷密度波的相关性在量子线由于周期性的栅极配置,产生的Rashba调制的影响过渡到绝缘状态。电荷密度调制和自旋-轨道耦合调制之间的相互作用非常微妙:根据两种调制之间的相对相位,Rashba相互作用和电荷密度波相关性的联合作用可能会增强或减弱Rashba电流阻断效应。其次,我们询问的Dresselhaus自旋轨道耦合,是一般存在于嵌入在半导体异质结构的量子线的作用。虽然Dresselhaus耦合被发现对绝缘状态的电流封锁的工作,在大多数材料中的效果是小的。使用有效场论的方法,我们还进行了电子-电子相互作用的影响分析,并显示如何在绝缘状态下的单粒子间隙可以提取更容易访问的集体电荷和自旋激发阈值。单粒子间隙的小与Rashba和化学势调制之间的反相位关系一起构成了在InAs基器件中实现Rashba控制的电流开关的严重困难。一些替代设计进行了讨论。

英文摘要:

It was recently shown that a spatially modulated Rashba spin-orbit coupling in a quantum wire drives a transition from a metallic to an insulating state when the wave number of the modulation becomes commensurate with the Fermi wave length of the electrons in the wire. It was suggested that the effect may be put to practical use in a future spin transistor design. In the present article we revisit the problem and present a detailed analysis of the underlying physics. First, we explore how the build-up of charge density wave correlations in the quantum wire due to the periodic gate configuration that produces the Rashba modulation influences the transition to the insulating state. The interplay between the modulations of the charge density and that of the spin-orbit coupling turns out to be quite subtle: Depending on the relative phase between the two modulations, the joint action of the Rashba interaction and charge density wave correlations may either enhance or reduce the Rashba current blockade effect. Secondly, we inquire about the role of the Dresselhaus spin-orbit coupling that is generically present in a quantum wire embedded in semiconductor heterostructure. While the Dresselhaus coupling is found to work against the current blockade of the insulating state, the effect is small in most materials. Using an effective field theory approach, we also carry out an analysis of effects from electron- electron interactions, and show how the single-particle gap in the insulating state can be extracted from the more easily accessible collective charge and spin excitation thresholds. The smallness of the single-particle gap together with the anti-phase relation between the Rashba and chemical potential modulations pose serious difficulties for realizing a Rashba-controlled current switch in an InAs-based device. Some alternative designs are discussed.

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