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arXiv 1105.2332cond-mat.mes-hallcond-mat.other
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氢化硅表面悬挂键的STM成像中的非平衡单电子动力学理论

Theory of Non-equilibrium Single Electron Dynamics in STM Imaging of Dangling Bonds on a Hydrogenated Silicon Surface

Lucian Livadaru, Jason Pitters, Marco Taucer, Robert A. Wolkow

摘要:

在氢化硅表面上的悬挂键(DBs)的制造和扫描隧道显微镜(STM)成像过程中,我们始终观察到特定成像条件下孤立DBs周围的晕状特征。这些围绕着单个或小组的DBs,具有异常尖锐的边缘,并且不能用传统的STM理论来解释。在这里,我们调查的性质,这些功能的全面的三维模型的弹性和非弹性电荷转移附近的DB。我们的基本发现是,非平衡电流通过本地化的电子状态的DB确定的DB的充电状态。这种局部电荷扭曲了硅样品的电子能带,这反过来又影响了附近的STM电流,导致晕圈效应。研究了不同成像条件和样品特性对DBs STM图像的影响。

英文摘要:

During fabrication and scanning-tunneling-microscope (STM) imaging of dangling bonds (DBs) on a hydrogenated silicon surface, we consistently observed halo-like features around isolated DBs for specific imaging conditions. These surround individual or small groups of DBs, have abnormally sharp edges, and cannot be explained by conventional STM theory. Here we investigate the nature of these features by a comprehensive 3-dimensional model of elastic and inelastic charge transfer in the vicinity of a DB. Our essential finding is that non-equilibrium current through the localized electronic state of a DB determines the charging state of the DB. This localized charge distorts the electronic bands of the silicon sample, which in turn affects the STM current in that vicinity causing the halo effect. The influence of various imaging conditions and characteristics of the sample on STM images of DBs is also investigated.

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