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arXiv 1104.4834cond-mat.str-el
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关联二维空穴系统的简并与半简并输运

Degenerate versus semi-degenerate transport in a correlated 2D hole system

Richard L. J. Qiu, Xuan P. A. Gao, Loren N. Pfeiffer, Ken W. West

摘要:

令人困惑的是,当温度($T$)升高到与费米温度($T_F$)相当的特征温度以上时,具有低载流子密度的半导体中的高迁移率二维(2D)载流子系统的电阻率通常表现出大的增加,随后降低。我们发现GaAs量子阱(QW)中的金属二维空穴系统(2DHS)在简并(T<<T_F)和半简并(T T_F)两种情况下都具有线性密度($p$)依赖的电导率$σ\approx eμ^*(p-p_0)$. $σ(p)$的$T$依赖性表明,在低$T$下的金属传导(d $σ$ /d $T<$ 0)与$μ^*$(巡回载流子的有效迁移率)的增加相关。然而,在半简并区($T>T_F$)中的电阻率降低源自于降低的$p_0$,即两相图像中不动载流子的密度。

英文摘要:

It has been puzzling that the resistivity of high mobility two-dimensional(2D) carrier systems in semiconductors with low carrier density often exhibits a large increase followed by a decrease when the temperature ($T$) is raised above a characteristic temperature comparable with the Fermi temperature ($T_F$). We find that the metallic 2D hole system (2DHS) in GaAs quantum well (QW) has a linear density ($p$) dependent conductivity, $σ\approx eμ^*(p-p_0)$, in both the degenerate (T<<T_F) and semi-degenerate (T T_F) regimes. The $T$-dependence of $σ(p)$ suggests that the metallic conduction (d$σ$/d$T<$0) at low $T$ is associated with the increase in $μ^*$, the effective mobility of itinerant carriers. However, the resistivity decrease in the semi-degenerate regime ($T>T_F$) is originated from the reduced $p_0$, the density of immobile carriers in a two-phase picture.

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