arXivDaily arXiv每日学术速递 周一至周五更新
北美退伍军人节(Veterans Day),12 日无更新
arXiv 1104.3670cond-mat.mtrl-sciphysics.comp-ph
收藏

量子限制如何影响过渡金属硫化物TmS2的电子结构

How does quantum confinement influence the electronic structure of transition metal sulfides TmS2

Agnieszka Kuc, Nourdine Zibouche, Thomas Heine

摘要:

块状MoS 2是一种典型的层状过渡金属二硫属化物,是一种间接带隙半导体。将其尺寸减小到单层,MoS 2经历向直接带半导体的过渡。我们支持这一实验观察的第一性原理计算,并表明量子限制在层状d-电子dichalcogenides的结果在纳米尺度上的电子结构的调整。我们进一步研究了相关的TmS 2纳米层(Tm = W,Nb,Re)的性质,并表明同位素WS 2具有相似的电子性质,而NbS 2和ReS 2保持金属独立的大小。

英文摘要:

Bulk MoS2, a prototypical layered transition-metal dichalcogenide, is an indirect band gap semiconductor. Reducing its size to a monolayer, MoS2 undergoes a transition to the direct band semiconductor. We support this experimental observation by first principles calculations and show that quantum confinement in layered d-electron dichalcogenides results in tuning the electronic structure at the nanoscale. We further studied the properties of related TmS2 nanolayers (Tm = W, Nb, Re) and show that the isotopological WS2 exhibits similar electronic properties, while NbS2 and ReS2 remain metallic independent on size.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

↑