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arXiv 1104.3499cond-mat.supr-concond-mat.mes-hall
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HgTe量子阱中的定域Andreev边态

Localized Andreev edge states in HgTe quantum wells

I. M. Khaymovich, N. M. Chtchelkatchev, V. M. Vinokur

摘要:

本文研究了在HgTe-CdTe量子阱中形成的拓扑绝缘体(TI)与置于CdTe层上的s波各向同性超导体(SC)耦合时,超导性与拓扑有序性的相互作用.邻近效应在TI中引起超导关联,影响TI电子态的分类。根据SC和TI中的耦合强度和初始化学势,边缘态要么(i)成为带隙的,要么(ii)杂交成局域Andreev态,要么(iii)与体态合并,将TI变成各向异性窄隙半导体。

英文摘要:

We investigate the interplay of superconductivity and the topological order in the topological insulator (TI) formed in HgTe-CdTe quantum wells coupled to the s-wave isotropic superconductor (SC) placed on top of CdTe layer. Proximity effect induces superconducting correlations in TI effecting classification of the TI electronic states. Depending on the strength of the coupling and the initial chemical potentials in SC and TI, the edge states either (i) become gapped, or (ii) hybridize into localized Andreev states, or else (iii) merge with the bulk states turning the TI into an anisotropic narrow-gap semiconductor.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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