准一维导体NbS_3带隙内的电子态（I）
Electronic states inside the gap of quasi-one-dimensional conductor NbS_3(I)
摘要：
本文研究了NbS_3（Ⅰ相）晶体的光电导谱。观察到对应于Peierls间隙边缘的光电导下降。在小于能隙值的能量处发现可再现的光谱特征。第一个是能量为0.6 eV的峰，接近于中间带隙。它具有类似阈值的幅度对所施加的电场的依赖性。另一个特征是在靠近带隙边缘的能量0.9eV处的峰。我们把这个峰的起源归因于堆垛层错。第三个是能量在0.6- 0.8eV的这些峰之间的连续态。在高电场（700 V/cm）和施加的额外照明下，我们观察到在该能量下甚至低于零的光电导漂白。
英文摘要：
The photoconductivity spectra of NbS_3 (phase I) crystals are studied. A drop of photoconductivity corresponding to the Peierls gap edge is observed. Reproducible spectral features are found at energies smaller the energy gap value. The first one is a peak at the energy 0.6 eV that is close to the midgap one. It has a threshold-like dependence of the amplitude on the electrical field applied. Another feature is a peak at the energy 0.9 eV near to the edge of the gap. We ascribe the origin of this peak to the stacking faults. The third one are continuous states between these peaks at energies 0.6-0.8 eV. We observed bleaching of the photoconductivity even below zero at this energies in the high electric field (700 V/cm) and under additional illumination applied.
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