准一维导体中电荷密度波的锁定跃迁：对McMillan理论的再解释
Lock-in transition of charge density waves in quasi-one-dimensional conductors: reinterpretation of McMillan's theory
摘要：
基于McMillan自由能，研究了准一维导体中电荷密度波的锁定跃迁。高阶umklapp项在这项研究中起着至关重要的作用。McMillan的理论由Nakanishi和Shiba扩展以处理多个CDW载体。虽然他们的理论旨在理解准二维导体中的CDW，但我们将其应用于准一维导体，包括K $_{0.3}$ MoO $_3$、NbSe $_3$和$m$ $_3$，并证实了其对这些情况的有效性。然后讨论了我们以前对$o$ -TaS $_3$的实验结果，揭示了公度态和非公度态的共存。我们发现多个CDW矢量的共存是$o$ -TaS $_3$发生锁定跃迁的必要条件。自由能中的偶数阶和奇数阶项分别对振幅发展和相位调制起作用。此外，考虑到条件相称的CDW允许我们将其与随机介质中的弱本地化。
英文摘要：
We investigated the lock-in transition of charge density waves (CDWs) in quasi-one-dimensional conductors, based on McMillan's free energy. The higher-order umklapp terms play an essential role in this study. McMillan's theory was extended by Nakanishi and Shiba in order to treat multiple CDW vectors. Although their theories were aimed at understanding CDWs in quasi-two-dimensional conductors, we applied them to the quasi-one-dimensional conductors, including K$_{0.3}$MoO$_3$, NbSe$_3$, and $m$-TaS$_3$, and confirmed its validity for these cases. Then we discussed our previous experimental result of $o$-TaS$_3$, which revealed the coexistence of commensurate and incommensurate states. We found that the coexistence of multiple CDW vectors is essential for the lock-in transition to occur in $o$-TaS$_3$. The even- and odd-order terms in the free energy play roles for amplitude development and phase modulation, respectively. Moreover, consideration of the condition of being commensurate CDWs allowed us to relate it with that of the weak localization in random media.
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