Reliable detection of single electron tunneling in quantum dots (QD) is paramount to use this category of device for quantum information processing. Here, we report charge sensing in a degenerately phosphorus-doped silicon QD by means of a capacitively coupled single-electron tunneling device made of the same material. Besides accurate counting of tunneling events in the QD, we demonstrate that this architecture can be operated to reveal asymmetries in the transport characteristic of the QD. Indeed, the observation of gate voltage shifts in the detector's response as the QD bias is changed is an indication of variable tunneling rates.
We report electronic transport on silicon double and triple dots created with the optimized number of two gates. Using silicon nitride spacers two dots in series are created below two top gates overlapping a silicon nanowire. Coupling between dots is controlled by gate voltages. A third dot is created either by combined action of gate voltages or local doping depending on the spacers length. The main characteristics of the triple dot stability diagram are quantitatively fitted.
Spins of donor electrons and nuclei in silicon are promising quantum bit (qubit) candidates which combine long coherence times with the fabrication finesse of the silicon nanotechnology industry. We outline a potentially scalable spin qubit architecture where donor nuclear and electron spins are coupled to spins of electrons in quantum dots and discuss requirements for donor placement aligned to quantum dots by single ion implantation.
We have investigated the noise properties of the tunneling current through vertically coupled self-assembled InAs quantum dots. We observe super-Poissonian shot noise at low temperatures. For increased temperature this effect is suppressed. The super-Poissonian noise is explained by capacitive coupling between different stacks of quantum dots.
We consider the transition of electron between two quantum dots in which the discrete levels are swept past each other with a constant velocity. If a direct tunneling between the dot levels was allowed, an electron will be transferred between the dots when the levels cross. This transfer is described in terms of the conventional Landau-Zener theory. We assume that direct tunneling between the dots is forbidden. Rather, the transfer is due to the resonant tunneling via a discrete impurity level separating the dots. Then the description of the electron transfer reduces to a threestate (two dots …
By using bosonization method and unitary transformation, we give a general relation between the dimensionless tunneling conductance and the fractional Coulomb blockade conductance peak splitting which is valid both for weak and strong transmission between two quantum dots, and show that the tunneling conductance has a linear temperature dependence in the low energy and low temperature limit.
We investigate the conductance and zero-frequency shot noise of interacting, multi-level quantum dots coupled to leads. We observe that co-tunneling assisted sequential tunneling (CAST) processes play a dominant role in the transition region from Coulomb blockade to sequential tunneling. We analyze for intermediate coupling strength the dependence of the conductance due to CAST processes on temperature, coupling constant, and gate voltage. Remarkably, the width of the CAST transport feature scales only with temperature, but not with the coupling constant. While the onset of inelastic co-tunnel…
The anomalous low-temperature behavior of the spontaneous magnetization of ordered arrays of In_{1-x}Mn_xAs quantum dots is discussed. It is shown that the experimental results can be well understood, within a mean field approximation, assuming collective response through rather strong spin tunneling processes between neighbouring dots.
We electrically measure intrinsic silicon quantum dots with electrostatically defined tunnel barriers. The presence of both p-type and n-type ohmic contacts enables the accumulation of either electrons or holes. Thus we are able to study both transport regimes within the same device. We investigate the effect of the tunnel barriers and the electrostatically defined quantum dots. There is greater localisation of charge states under the tunnel barriers in the case of hole conduction leading to higher charge noise in the p-regime.
We investigated the size dependence of the ground state energy in self-assembled InAs quantum dots embedded in resonant tunneling diodes. Individual current steps observed in the current-voltage characteristics are attributed to resonant single-electron tunneling via the ground state of individual InAs quantum dots. The onset voltage of the first step observed is shown to decrease systematically from 200 mV to 0 with increasing InAs coverage. We relate this to a coverage-dependent size of InAs dots grown on AlAs. The results are confirmed by atomic force micrographs and photoluminescence exper…
We report on ambipolar gate-defined quantum dots in silicon on insulator (SOI) nanowires fabricated using a customised complementary metal-oxide-semiconductor (CMOS) process. The ambipolarity was achieved by extending a gate over an intrinsic silicon channel to both highly doped n-type and p-type terminals. We utilise the ability to supply ambipolar carrier reservoirs to the silicon channel to demonstrate an ability to reconfigurably define, with the same electrodes, double quantum dots with either holes or electrons. We use gate-based reflectometry to sense the inter-dot charge transition(IDT…
Molecular beam epitaxy is employed to manufacture self-assembled InAs/AlAs quantum-dot resonant tunneling diodes. Resonant tunneling current is superimposed on the thermal current, and they make up the total electron transport in devices. Steps in current-voltage characteristics and peaks in capacitance-voltage characteristics are explained as electron resonant tunneling via quantum dots at 77K or 300K, and this is the first time that resonant tunneling is observed at room temperature in III-V quantum-dot materials. Hysteresis loops in the curves are attributed to hot electron injection/emissi…
We report on non-linear magneto-tunneling experiments carried out in single GaAs vertical quantum dots. We show that conduction at low voltage bias can be a spectroscopic tool for both the ground state and first excited states of few electrons on the dot. Increasing voltage a large resonant peak is observed and attributed to tunneling across the quasi-continuum of higher excited states.
Molecular beam epitaxy is employed to manufacture self-assembled InAs/GaAs quantum dot Schottky resonant tunneling diodes. By virtue of a thin AlAs insertion barrier, the thermal current is effectively reduced and electron resonant tunneling through quantum dots under both forward and reverse biased conditions is observed at relatively high temperature of 77K. The ground states of quantum dots are found to be at ~0.19eV below the conduction band of GaAs matrix. The theoretical computations are in conformity with experimental data.
We analyze dephasing in single and double quantum dot systems. The decoherence is introduced by the Büttiker model with current conserving fictitious voltage leads connected to the dots. By using the non-equilibrium Green function method, we investigate the dephasing effect on the tunneling current. It is shown that a finite dephasing rate leads to observable effects. The result can be used to measure dephasing rates in quantum dots.
We review experiments on single electron transport through single quantum dots in the presence of a microwave signal. In the case of a small dot with well-resolved discrete energy states, the applied high-frequency signal allows for inelastic tunnel events that involve the exchange of photons with the microwave field. These photon assisted tunneling (PAT) processes give rise to sideband resonances in addition to the main resonance. Photon absorption can also lead to tunneling via excited states instead of tunneling via the ground state of the quantum dot.
We report on electron transport through an artificial molecule formed by two tunnel coupled quantum dots, which are laterally confined in a two-dimensional electron system of an Al$_x$Ga$_{1-x}$As/GaAs heterostructure. Coherent molecular states in the coupled dots are probed by photon-assisted tunneling (PAT). Above 10 GHz, we observe clear PAT as a result of the resonance between the microwave photons and the molecular states. Below 8 GHz, a pronounced superposition of phonon- and photon-assisted tunneling is observed. Coherent superposition of molecular states persists under excitation of ac…
We study fluctuations of conductance of two connected in series dots in the Coulomb blockade regime. The pattern of the fluctuations turns out to be extremely sensitive to a magnetic field. These conductance fluctuations also provide information about the mesoscopic fluctuations of charge of a partially-opened single quantum dot, which are hard to measure directly.
We investigated the tunneling current peculiarities in the system of two coupled by means of the external field quantum dots (QDs) weakly connected to the electrodes in the presence of Coulomb correlations. It was found that tuning of the external field frequency induces fast multiple tunneling current switching and leads to the negative tunneling conductivity. Special role of multi-electrons states was demonstrated. Moreover we revealed conditions for bistable behavior of the tunneling current in the coupled QDs with Coulomb correlations.
Current steps attributed to resonant tunneling through individual InAs quantum dots embedded in a GaAs-AlAs-GaAs tunneling device are investigated experimentally in magnetic fields up to 28 T. The steps evolve into strongly enhanced current peaks in high fields. This can be understood as a field-induced Fermi-edge singularity due to the Coulomb interaction between the tunneling electron on the quantum dot and the partly spin polarized Fermi sea in the Landau quantized three-dimensional emitter.
We report charge sensing measurements on a silicon quantum dot (QD) with a nearby silicon single electron transistor (SET) acting as an electrometer. The devices are electrostatically formed in bulk silicon using surface gates. We show that as an additional electron is added onto the quantum dot, a charge is induced on the SET of approximately 0.2e. These measurements are performed in the many electron regime, where we can count in excess of 20 charge additions onto the quantum dot.
We investigate quantum photovoltaic effect in double quantum dots by applying nonequilibrium quantum master equation. The drastic suppression of the photovoltaic current is observed near the open circuit voltage, which leads to the large filling factor. We find that there always exists an optimal inter-dot tunneling that significantly enhances the photovoltaic current. The maximal output power will also be obtained around the optimal inter-dot tunneling. Moreover, the open circuit voltage approximately behaves as the product of the eigen-level gap and the Carnot efficiency. These results sugge…
We report measurements of the nonlinear conductance of InAs nanowire quantum dots coupled to superconducting leads. We observe a clear alternation between odd and even occupation of the dot, with sub-gap-peaks at $|V_{sd}|=Δ/e$ markedly stronger(weaker) than the quasiparticle tunneling peaks at $|V_{sd}|=2Δ/e$ for odd(even) occupation. We attribute the enhanced $Δ$-peak to an interplay between Kondo-correlations and Andreev tunneling in dots with an odd number of spins, and substantiate this interpretation by a poor man's scaling analysis.
Pauli exclusion principle can lead to a supression of transport through double quantum dots, even if both quantum dots are connected by a resonant driving ac field. In this work, we study how this effect, known as spin blockade, can be removed by means of the influence of the driving field on the contacts to the leads.
Realistic relaxed configurations of triaxially strained graphene quantum dots are obtained from unbiased atomistic mechanical simulations. The local electronic structure and quantum transport characteristics of y-junctions based on such dots are studied, revealing that the quasi-uniform pseudomagnetic field induced by strain restricts transport to Landau level- and edge state-assisted resonant tunneling. Valley degeneracy is broken in the presence of an external field, allowing the selective filtering of the valley and chirality of the states assisting in the resonant tunneling. Asymmetric str…
We derive the quantum rate equations for an Aharonov-Bohm interferometer with two vertically coupled quantum dots embedded in each of two arms by means of the nonequilibrium Green's function in the sequential tunneling regime. Basing on these equations, we investigate time-dependent resonant tunneling under a small amplitude irradiation and find that the resonant photon-assisted tunneling peaks in photocurrent demonstrate a combination behavior of Fano and Lorentzian resonances due to the interference effect between the two pathways in this parallel configuration, which is controllable by thre…
We integrate ambipolar quantum dots in silicon fin field-effect transistors using exclusively standard complementary metal-oxide-semiconductor fabrication techniques. We realize ambipolarity by replacing conventional highly-doped source and drain electrodes by a metallic nickel silicide with Fermi level close to the silicon mid-gap position. Such devices operate in a dual mode, either as classical field-effect or single-electron transistor. We implement a classical logic NOT gate at low temperature by tuning two interconnected transistors into opposite polarities. In the quantum regime, we dem…
We present a novel reconfigurable metal-oxide-semiconductor multi-gate transistor that can host a quadruple quantum dot in silicon. The device consist of an industrial quadruple-gate silicon nanowire field-effect transistor. Exploiting the corner effect, we study the versatility of the structure in the single quantum dot and the serial double quantum dot regimes and extract the relevant capacitance parameters. We address the fabrication variability of the quadruple-gate approach which, paired with improved silicon fabrication techniques, makes the corner state quantum dot approach a promising …
Tunneling spectroscopy of InAs nanocrystals deposited on graphite was measured using scanning tunneling microscopy, in a double-barrier tunnel-junction configuration. The effect of the junction symmetry on the tunneling spectra is studied experimentally and modeled theoretically. When the tip is retracted, we observe resonant tunneling through the nanocrystal states without charging. This is in contrast to previous measurements on similar nanocrystals anchored to gold by linker molecules, where charging took place. Charging is regained upon reducing the tip-nanocrystal distance, making the jun…
Due to the Fermi-Dirac statistics of electrons the temporal correlations of tunneling events in a double barrier setup are typically negative. Here, we investigate the shot noise behavior of a system of two capacitively coupled quantum dot states by means of a Master equation model. In an asymmetric setup positive correlations in the tunneling current can arise due to the bunching of tunneling events. The underlying mechanism will be discussed in detail in terms of the current-current correlation function and the frequency-dependent Fano factor.
We study the optical properties of hydrogen passivated silicon, germanium and mixed Ge/Si core/shell quantum dots (QDs) using high accuracy Density Functional Theory (DFT) and time-dependent DFT (TDFT). We employ the hybrid DFT functional of Becke, Lee, Yang and Parr (B3LYP) in combination with good quality basis sets. As we have shown in our previous work, this combination is an accurate and computationally efficient way for such calculations. The mixed quantum dots, as would be expected, are more versatile and offer more possibilities for band gap engineering, with gap values (electronic and…
We address the question of how to model electron transport through closed Aharonov-Bohm interferometers which contain quantum dots. By explicitly studying interferometers with one and two quantum dots, we establish the connection between a tunneling-Hamiltonian formulation on the one hand and a scattering-matrix approach on the other hand. We prove that, under certain circumstances, both approaches are equivalent, i.e., both types of models can describe the same experimental setups. Furthermore, we analyze how the interplay of the Aharonov-Bohm phase and the orbital phase associated with the l…
We present data on the electrical transport properties of highly-doped silicon-on-insulator quantum dots under the effect of pulsed magnetic fields up to 48 T. At low field intensities, B<7 T, we observe a strong modification of the conductance due to the destruction of weak localization whereas at higher fields, where the magnetic field length becomes comparable to the effective Bohr radius of phosphorous in silicon, a strong decrease in conductance is demonstrated. Data in the high and low electric field bias regimes are then compared to show that close to the Coulomb blockade edge magnetica…
We present Coulomb Blockade measurements of two few-electron quantum dots in series which are configured such that the electrochemical potential of one of the two dots is aligned with spin-selective leads. The charge transfer through the system requires co-tunneling through the second dot which is $not$ in resonance with the leads. The observed amplitude modulation of the resulting current is found to reflect spin blockade events occurring through either of the two dots. We also confirm that charge redistribution events occurring in the off-resonance dot are detected indirectly via changes in …
We report charge detection in degenerately phosphorus-doped silicon double quantum dots (DQD) electrically connected to an electron reservoir. The sensing device is a single electron transistor (SET) patterned in close proximity to the DQD. Measurements performed at 4.2K show step-like behaviour and shifts of the Coulomb Blockade oscillations in the detector's current as the reservoir's potential is swept. By means of a classical capacitance model, we demonstrate that the observed features can be used to detect single-electron tunnelling from, to and within the DQD, as well as to reveal the DQ…
We investigated the peculiarities of non-equilibrium charge states and spin configurations in the system of two strongly coupled quantum dots (QDs) weakly connected to the electrodes in the presence of Coulomb correlations. We analyzed the modification of non-equilibrium charge states and different spin configurations of the system in a wide range of applied bias voltage and revealed well pronounced ranges of system parameters where negative tunneling conductivity appears due to the Coulomb correlations.
We review recent work on resonant Andreev tunneling through a strongly interacting quantum dot connected to a normal and to a superconducting lead. We derive a general expression for the current flowing in the structure and discuss the linear and non-linear transport in the nonperturbative regime. New effects associated to the Kondo resonance combined with the two-particle tunneling arise. The Kondo anomaly in the $I-V$ characteristics depends on the relative size of the gap energy and the Kondo temperature.
We consider the photon-assisted tunneling (PAT) and the Landau-Zener-Stueckelberg (LZS) interference for double quantum dots induced electrostatically along a semiconducting carbon nanotube. An atomistic tight-binding approach and the time-dependent configuration interaction method are employed for description of the systems of a few confined electrons and holes. We reproduce the patterns of the LZS interference recently observed for the quantum double dots describing transport across hole-localized states. Moreover, we indicate that for charge configurations for which the ground-state is Paul…
We have observed a negative differential conductance with singular gate and source-drain bias dependences in a phosphorus-doped silicon quantum dot. Its origin is discussed within the framework of weak localization. By measuring the current-voltage characteristics at different temperatures as well as simulating the tunneling rates dependences on energy, we demonstrate that the presence of shallow energy defects together with an enhancement of localization satisfactory explain our observations. Effects observed in magnetic fields are also discussed.
We investigated the electron transport property of the InGaAs/GaAs double quantum dots, the electron g-factors of which are different from each other. We found that in a magnetic field, the resonant tunneling is suppressed even if one of the Zeeman sublevels is aligned. This is because the other misaligned Zeeman sublevels limit the total current. A finite broadening of the misaligned sublevel partially relieves this bottleneck effect, and the maximum current is reached when interdot detuning is half the Zeeman energy difference.
Deterministic control over the location and number of donors is crucial to donor spin quantum bits (qubits) in semiconductor based quantum computing. In this work, a focused ion beam is used to implant antimony donors close to quantum dots. Ion detectors are integrated next to the quantum dots to sense the implants. The numbers of donors implanted can be counted to a precision of a single ion. In low-temperature transport measurements, regular coulomb blockade is observed from the quantum dots. Charge offsets indicative of donor ionization are also observed in devices with counted donor implan…
We reexamine the tunneling density of states in quantum dots and nanoparticles within the model which is extension of the universal Hamiltonian to the case of uniaxial anisotropic exchange. We derive the exact analytical result for the tunneling density of states in the case of arbitrary single-particle energy spectrum. We find that, similar to the case of the isotropic exchange, the tunneling density of states as a function of energy has the maximum due to a finite value of the total spin of the ground state near the Stoner instability. We demonstrate that there are no additional extrema whic…
Single-electron tunneling through a zero-dimensional state in an asymmetric double-barrier resonant-tunneling structure is studied. The broadening of steps in the $I$--$V$ characteristics is found to strongly depend on the polarity of the applied bias voltage. Based on a qualitative picture for the finite-life-time broadening of the quantum dot states and a quantitative comparison of the experimental data with a non-equilibrium transport theory, we identify this polarity dependence as a clear signature of Coulomb interaction.
We investigated the peculiarities of non-equilibrium charge configurations in the system of two strongly coupled quantum dots (QDs) weakly connected to the reservoirs in the presence of Coulomb correlations. We revealed that total electron occupation demonstrates in some cases significant decreasing with increasing of applied bias - contrary to the situation when Coulomb correlations are absent and found well pronounced ranges of system parameters where negative tunneling conductivity appears due to the Coulomb correlations.
We investigate the noise properties of a GaAs-AlAs-GaAs tunneling structure with embedded self-assembled InAs quantum dots in the single-electron tunneling regime. We analyze the dependence of the relative noise amplitude of the shot noise on bias voltage. We observe a non-monotonic behaviour of the Fano-factor $α$ with an average value of $α\approx 0.8$ consistent with the asymmetry of the tunneling barriers. Reproducible fluctuations observed in $α$ can be attributed to the successive participation of more and more InAs quantum dots in the tunneling current.
Many electrical applications of quantum dots rely on capacitively coupled gates; therefore, to make reliable devices we need those gate capacitances to be predictable and reproducible. We demonstrate in silicon nanowire quantum dots that gate capacitances are reproducible to within 10% for nominally identical devices. We demonstrate the experimentally that gate capacitances scale with device dimensions. We also demonstrate that a capacitance simulator can be used to predict measured gate capacitances to within 20%. A simple parallel plate capacitor model can be used to predict how the capacita…
With downscaling of electronic circuits, components based on semiconductor quantum dots are assuming increasing relevance for future technologies. Their response under external stimuli intrinsically depend on their quantum properties. Here we investigate single-electron tunneling in hard-wall InAs/InP nanowires in the presence of an off-resonant microwave drive. Our heterostructured nanowires include InAs quantum dots (QDs) and exhibit different tunnel-current regimes. In particular, for source-drain bias up to few mV Coulomb diamonds spread with increasing contrast as a function of microwave …
With the aim of improving solar cell efficiency, a structure for realizing electron tunneling from In0.6Al0.4As quantum dots (QDs) through an Al0.4Ga0.6As barrier to AlAs has been grown using molecular beam epitaxy. The photoluminescence decay time decreased from 1.1 ns to 390 ps as the barrier thickness decreased from 4 to 2 nm, which indicates that the photo-excited carriers tunneled from the QDs to the AlAs X energy level for a barrier thickness 2 nm in 0.6 ns, which is significantly longer than the tunneling time of GaAs and InAlAs quantum wells. We expect that this structure will assist i…
We study the sub-gap spectrum and the transport properties of a double quantum dot coupled to metallic and superconducting leads. The coupling of both quantum dots to the superconducting lead induces a non-local pairing in both quantum dots by the Andreev reflection processes. Additionally, we obtain two channels of Cooper pair tunneling into a superconducting lead. In such a system, the direct tunneling process (by one of two dots) or the crossed tunneling process (by both quantum dots at the same time) is possible. We consider the dependence of the Andreev transmittance on an inter-dot tunne…
The bandstructure of bulk silicon has a six-fold valley degeneracy. Strain in the Si/SiGe quantum well system partially lifts the valley degeneracy, but the materials factors that set the splitting of the two lowest lying valleys are still under intense investigation. We propose a method for accurately determining the valley splitting in Si/SiGe double quantum dots embedded into a superconducting microwave resonator. We show that low lying valley states in the double quantum dot energy level spectrum lead to readily observable features in the cavity transmission. These features generate a "fin…
We replace the established aluminium gates for the formation of quantum dots in silicon with gates made from palladium. We study the morphology of both aluminium and palladium gates with transmission electron microscopy. The native aluminium oxide is found to be formed all around the aluminium gates, which could lead to the formation of unintentional dots. Therefore, we report on a novel fabrication route that replaces aluminium and its native oxide by palladium with atomic-layer-deposition-grown aluminium oxide. Using this approach, we show the formation of low-disorder gate-defined quantum d…
We study the electronic structure of a single self-assembled InAs quantum dot by probing elastic single-electron tunneling through a single pair of weakly coupled dots. In the region below pinch-off voltage, the non-linear threshold voltage behavior provides electronic addition energies exactly as the linear, Coulomb blockade oscillation does. By analyzing it, we identify the s and p shell addition spectrum for up to six electrons in the single InAs dot, i.e. one of the coupled dots. The evolution of shell addition spectrum with magnetic field provides Fock-Darwin spectra of s and p shell.
The presence of degenerate conduction band valleys and how they are mixed by interfaces play critical roles in determining electron interaction and spectrum in a silicon nanostructure. Here we investigate how the valley phases affect the exchange interaction in a symmetric two-electron silicon double quantum dot. Through a configuration interaction calculation, we find that exchange splitting is suppressed at a finite value of valley phase difference between the two dots, and reaches its minimum value ({\sim} 0) when the phase difference is π. Such a suppression can be explained using the Hubb…
We derive general expressions for the current and shot noise, taking into account non-Markovian memory effects. In generalization of previous approaches our theory is valid for arbitrary Coulomb interaction and coupling strength and is applicable to quantum dots and more complex systems like molecules. A diagrammatic expansion up to second-order in the coupling strength, taking into account co-tunneling processes, allows for a study of transport in a regime relevant to many experiments. As an example, we consider a single-level quantum dot, focusing on the Coulomb-blockade regime. We find supe…
We consider electrical transport through single molecules coupled to metal electrodes via tunneling barriers. Approximating the molecule by the Anderson impurity model as the simplest model which includes Coulomb charging effects, we extend the ``orthodox'' theory to expand current and shot noise systematically order by order in the tunnel couplings. In particular, we show that a combined measurement of current and shot noise reveals detailed information of the system even in the weak-coupling limit, such as the ratio of the tunnel-coupling strengths of the molecule to the left and right elect…
Graphene quantum dots are considered as promising alternatives to quantum dots in III-V semiconductors, e.g., for the use as spin qubits due to their consistency made of light atoms including spin-free nuclei which both imply relatively long spin decoherene times. However, this potential has not been realized in experiments so far, most likely, due to a missing control of the edge configurations of the quantum dots. Thus, a more fundamental investigation of Graphene quantum dots appears to be necessary including a full control of the wave function properties most favorably during transport spe…
In this Report we show the role of charge defects in the context of the formation of electrostatically defined quantum dots. We introduce a barrier array structure to probe defects at multiple locations in a single device. We measure samples both before and after an annealing process which uses an Al$_2$O$_3$ overlayer, grown by atomic layer deposition. After passivation of the majority of charge defects with annealing we can electrostatically define hole quantum dots up to 180 nm in length. Our ambipolar structures reveal amphoteric charge defects that remain after annealing with charging ene…
We describe important considerations to create top-down fabricated planar quantum dots in silicon, often not discussed in detail in literature. The subtle interplay between intrinsic material properties, interfaces and fabrication processes plays a crucial role in the formation of electrostatically defined quantum dots. Processes such as oxidation, physical vapor deposition and atomic-layer deposition must be tailored in order to prevent unwanted side effects such as defects, disorder and dewetting. In two directly related manuscripts written in parallel we use techniques described in this wor…
We theoretically investigate phosphorene zigzag nanorribons as a platform for constriction engineering. In the presence of a constriction at the upper edge, quantum confinement of edge protected states reveals resonant tunnelling Breit-Wigner transmission peaks, if the upper edge is uncoupled to the lower edge. Coupling between edges in thin constrictions gives rise to Fano-like and anti-resonances in the transmission spectrum of the system.
Resonant electron transport through a mesoscopic region (quantum dot or single molecule) with electron-phonon interaction is considered at finite voltage. In this case the standard Landauer-Büttiker approach cannot be applied. Using the nonequilibrium Green function method we show that due to a nonequilibrium distribution function of electrons in the mesoscopic region, the inelastic scattering rate and spectral function of the dot become functions of the voltage and have to be calculated self-consistently.
