Magneto-transmission measurements in magnetic fields in the range B=20-60T have been performed to probe the H and K-point Landau level transitions in natural graphite. At the H-point, two series of transitions, whose energy evolves as $\sqrt{B}$ are observed. A reduced Slonczewski, Weiss and McClure (SWM) model with only two parameters to describe the intra-layer (gamma0) and inter-layer (gamma1) coupling correctly describes all observed transitions. Polarization resolved measurements confirm that the observed apparent splitting of the H-point transitions at high magnetic field cannot be attributed to an asymmetry of the Dirac cone.
A detailed magnetoresistance study of bulk and microflake samples of highly oriented pyrolytic graphite with a thickness of 25 $μ$m to 23~nm reveals that the usually observed field-induced metal-insulator and electronic phase transitions vanish in thinner samples. The observed suppression is accompanied by orders of magnitude decrease of the magnetoresistance and of the amplitude of the Shubnikov-de-Haas oscillations. The overall behavior is related to the decrease in the quantity of two-dimensional interfaces between crystalline regions of the same and different stacking orders present in gra…
We study the ballistic transmission and the contact resistance ($R_c$) of a graphite-graphene contact in a top contact geometry from first principles. We find that the calculated $R_c$'s depend on the amount of graphene-graphite overlap, but quickly saturate for transfer lengths of the order of 20 Å. For contacts overlapping more than this transfer length, the $R_c$ can be lower than the 100 Ω$\cdot$μm mark. On the other hand, edge graphite-graphene contacts are expected to have very low contact resistance.
The Coherent Interlayer Resistance of a Single, Rotated Interface between Two Stacks of AB Graphite
对于各种取向差角，确定了AB石墨的两个叠层之间的取向差的旋转界面的相干层间电阻。理想AB叠层的量子电阻在1至10 m $Ωμ{\rm m}^2$的量级。对于小的旋转角，相干层间电阻指数接近理想的量子电阻的能量远离电荷中性点。在中间角度的范围内，对于最小尺寸的单元电池，电阻随电池尺寸呈指数增加。具有类似角度的较大单元尺寸可能不会遵循此趋势。层间传输的能量依赖性进行了描述。
We report fabrication of graphene devices in a Corbino geometry consisting of concentric circular electrodes with no physical edge connecting the inner and outer electrodes. High device mobility is realized using boron nitride encapsulation together with a dual-graphite gate structure. Bulk conductance measurement in the quantum Hall effect (QHE) regime outperforms previously reported Hall bar measurements, with improved resolution observed for both the integer and fractional QHE states. We identify apparent phase transitions in the fractional sequence in both the lowest and first excited Land…
Few layer graphene (FLG) has been recently intensively investigated for its variable electronic properties defined by a local atomic arrangement. While the most natural layers arrangement in FLG is ABA (Bernal) stacking, a metastable ABC (rhombohedral) stacking characterized by a relatively high energy barrier can also occur. When both stacking occur in the same FLG device this results in in-plane heterostructure with a domain wall (DW). We show that ABC stacking in FLG can be controllably and locally turned into ABA stacking by two following approaches. In the first approach, Joule heating wa…
A gated Hall-bar device is made from an epitaxially grown, free-standing InSb nanosheet on a hexagonal boron nitride (hBN) dielectric/graphite gate structure and the electron transport properties in the InSb nanosheet are studied by gate-transfer characteristic and magnetotransport measurements at low temperatures. The measurements show that the carriers in the InSb nanosheet are of electrons and the carrier density in the nanosheet can be highly efficiently tuned by the graphite gate. The mobility of the electrons in the InSb nanosheet is extracted from low-field magneotransport measurements …
This work presents an ab-initio study of a few-layers hexagonal boron nitride (hBN) and hBN-graphene heterostructure sandwiched between Ni(111) layers. The aim of this study is to understand the electron transmission process through the interface. Spin-polarized density functional theory calculations and transmission probability calculations were conducted on Ni(111)/$n$hBN/Ni(111) with $n$ = 2, 3, 4, and 5 as well as on Ni(111)/hBN-Gr-hBN/Ni(111). Slabs with magnetic alignment in an anti-parallel configuration (APC) and parallel configuration (PC) were considered. The pd-hybridizations at bot…
In this work, we report on the emergence of a photonic Hall effect (PHE) system within a narrow filtered background of a one-dimensional defective optical dielectric structure with graphene under the static QHE regime. It is observed that at low temperature and relatively strong applied magnetic fields, electromagnetic defective transmission spectra corresponding to the two decoupled right- and left-handed polarized modes possess a step-like transmission feature which are referred to as "quantum Hall defect modes" (QHD modes or QHDs) in this paper. Tunable growing transitional transmission ste…
