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arXiv 1101.0980cond-mat.mes-hall
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利用多铁性材料的四态纳米磁逻辑

Four-state nanomagnetic logic using multiferroics

Noel D'Souza, Jayasimha Atulasimha, Supriyo Bandyopadhyay

摘要:

作者展示了如何使用具有双轴磁晶各向异性的三个应变耦合磁致伸缩-压电多铁性纳米磁体(例如Ni/PZT)来实现四态通用逻辑门(NOR)。两个纳米磁体在其磁化方向上编码2态输入位,第三个纳米磁体通过与输入纳米磁体的偶极相互作用产生输出位。在-0.2V和+0.2V之间交替的电压脉冲被施加到第三纳米磁体的PZT层,并且在其Ni层中产生交替的拉伸和压缩应力以产生输出位,同时每次栅极操作耗散~ 57,000 kT(0.24fJ)的能量。

英文摘要:

The authors show how to implement a 4-state universal logic gate (NOR) using three strain-coupled magnetostrictive-piezoelectric multiferroic nanomagnets (e.g. Ni/PZT) with biaxial magnetocrystalline anisotropy. Two of the nanomagnets encode the 2-state input bits in their magnetization orientations and the third nanomagnet produces the output bit via dipole interaction with the input nanomagnets. A voltage pulse alternating between -0.2 V and +0.2 V is applied to the PZT layer of the third nanomagnet and generates alternating tensile and compressive stress in its Ni layer to produce the output bit, while dissipating ~ 57,000 kT (0.24 fJ) of energy per gate operation.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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