多孔硅异质结构上宽频率范围的红外光子带隙

Refractive index evaluation of porous silicon using Bragg reflectors

There are two main physical properties needed to fabricate 1D photonic structures and form perfect photonic bandgaps: the quality of the thickness periodicity and the refractive index of their components. Porous silicon (PS) is a nano-structured material widely used to prepare 1D photonic crystals due to the ease of tuning its porosity and its refractive index by changing the fabrication conditions. Since the morphology of PS changes with porosity, the determination of PS's refractive index is no easy task. To find the optical properties of PS we can use different effective medium approximatio…

High-Speed Electro-Optic Modulator Integrated with Graphene-Boron Nitride Heterostructure and Photonic Crystal Nanocavity

Nanoscale and power-efficient electro-optic (EO) modulators are essential components for optical interconnects that are beginning to replace electrical wiring for intra- and inter-chip communications. Silicon-based EO modulators show sufficient figures of merits regarding device footprint, speed, power consumption and modulation depth. However, the weak electro-optic effect of silicon still sets a technical bottleneck for these devices, motivating the development of modulators based on new materials. Graphene, a two-dimensional carbon allotrope, has emerged as an alternative active material fo…

多孔硅中通过氯金酸直接还原制备孔内金纳米颗粒实现等离子体增强光致发光

Plasmonic-enhanced photoluminescence in porous silicon with pore-embedded gold nanoparticles fabricated by direct reduction of chloroauric acid

本研究通过在多孔硅光子结构内直接还原氯金酸合成金纳米颗粒，利用等离子体近场增强实现了多孔硅光致发光六倍提升，主要贡献在于解决了金纳米颗粒尺寸和位置控制难题，并展示了其在发光器件和传感器中的应用潜力。

硅中InAs量子点盖层生长模式对光致发光的影响

Influence of capping layer growth mode on the photoluminescence of InAs quantum dots in silicon

本文研究了硅盖层生长机制对嵌入硅基质的亚单层InAs量子点光学性质的影响，发现两阶段硅过生长InAs纳米岛方法能通过改善异质结构晶体质量，有效提高1650 nm的光致发光强度，并计算出受限电子的活化能。

Guided Mid-IR and Near-IR Light within a Hybrid Hyperbolic-Material/Silicon Waveguide Heterostructure

Silicon waveguides have enabled large-scale manipulation and processing of near-infrared optical signals on chip. Yet, expanding the bandwidth of guided waves to other frequencies would further increase the functionality of silicon as a photonics platform. Frequency multiplexing by integrating additional architectures is one approach to the problem, but this is challenging to design and integrate within the existing form factor due to scaling with the free-space wavelength. Here, we demonstrate that a hexagonal boron nitride (hBN)/silicon hybrid waveguide can enable dual-band operation at both…

Photoinduced split of the cavity mode in photonic crystals based on porous silicon filled with photochromic azobenzene-containing substances

The novel phototunable photonic structures based on electrochemically etched silicon filled with four photochromic azobenzene-containing compounds, bent-shaped low molar mass substance and side-chain polymethacrylates and copolyacrylate, were prepared and their photooptical properties were studied. It was found that irradiation of these composites with polarized blue light results in spectral changes in photonic band gap (split of the cavity mode) associated with cooperative photoorientation of azobenzene moieties inside silicon pores in direction perpendicular to the polarization plane of the…

室温极化激元排斥与非平凡拓扑一维可调谐Fibonacci共轭多孔硅光子准晶体中的超强耦合及其准连续态束缚态

Room-temperature polariton repulsion and ultra-strong coupling for a non-trivial topological one-dimensional tunable Fibonacci-conjugated porous-Silicon photonic quasi-crystal showing quasi bound-states-in-the-continuum

本研究在室温下于多孔硅Fibonacci光子准晶体中实现激子与光子的强耦合及超强耦合，通过拓扑边缘态和准连续态束缚态增强耦合，观察到近8 meV的极化激元排斥和20 meV的位移，为极化激元量子阻塞提供潜力。

单片高Q/V异质结构光子晶体腔的射频再生振荡

Radio frequency regenerative oscillations in monolithic high-Q/V heterostructured photonic crystal cavities

报道了在高品质因数与模体积比（Q/V）的单晶硅异质结构光子晶体腔中再生振荡的时域和频域观测结果。用非线性耦合模理论（CMT）跟踪光子、自由载流子布居和温度变化的动力学来解释这些结果。我们实验证明了有效的调谐的射频（RF）音调的激光腔失谐和激光功率电平，确认CMT模拟与敏感的输入参数。

一种用于硅基室温增益的IV族双异质结发光二极管

A group-IV double heterostructure light emitting diode for room temperature gain in Silicon

针对硅基片上光互连缺乏集成激光器的瓶颈，提出高Ge含量Si/SiGe/Si双异质结增益结构，通过超低温外延制备出无缺陷器件，实现360K下电信波段发光，为硅基IV族光电器件提供新路径。

用于计算半导体少数载流子寿命的水异质结光电探测器

Water Heterostructure Photodetector for Calculation of Semiconductor Minority Carrier Lifetime

提出一种离结型 graphene/water/silicon 光电探测器，利用水分子界面动态极化及不同距离光电流指数拟合，以最高 98.8% 准确率无损计算硅少数载流子寿命。

利用laser辅助局部氧化选择性调谐高Q硅光子晶体纳米腔

Selective tuning of high-Q silicon photonic crystal nanocavities via laser-assisted local oxidation

我们研究了腔谐振调谐的高Q硅光子晶体异质结构的局域激光辅助热氧化使用532 nm的连续波激光聚焦到2.5 mm半径的斑点大小。总位移符合抛物线速率定律。在~ 30 mW激光功率下，调谐范围可达8.7 nm。在此调谐范围内，腔Q从3.2 \times 10 ^5减小到1.2 \times 10 ^5。数值模拟模拟了硅光子晶体薄膜中的温度分布以及氧化引起的谐振腔位移。

谷光子晶体异质结波导中宽模面积慢光模式的实验实现

Experimental realization of wide-mode-area slow light modes in valley photonic crystal heterostructure waveguides

本研究通过在硅基谷光子晶体异质结波导中插入可调宽度的光子石墨烯层并调控畴界晶胞间距，实验实现了模宽可调的宽模面积慢光模式，为高功率片上光子集成器件研发提供了新途径。

用于电信光子学的Si (001)上亚50 nm III-V纳米异质结构的单片集成

Monolithic Integration of Sub-50 nm III-V Nano-Heterostructures on Si (001) for Telecom Photonics

本文通过选择区域外延和电子束光刻，在Si(001)衬底上单片集成了亚50 nm的InAsP/InP纳米异质结构，实现了覆盖整个电信波长范围的可控发光，可作为硅基纳米激光器、纳米LED及量子光源的增益介质。

High-Responsivity Graphene-Boron Nitride Photodetector and Autocorrelator in a Silicon Photonic Integrated Circuit

Graphene and other two-dimensional (2D) materials have emerged as promising materials for broadband and ultrafast photodetection and optical modulation. These optoelectronic capabilities can augment complementary metal-oxide-semiconductor (CMOS) devices for high-speed and low-power optical interconnects. Here, we demonstrate an on-chip ultrafast photodetector based on a two-dimensional heterostructure consisting of high-quality graphene encapsulated in hexagonal boron nitride. Coupled to the optical mode of a silicon waveguide, this 2D heterostructure-based photodetector exhibits a maximum res…

毫米波光子晶体在纳米级材料扰动传感中的应用

Perturbative sensing of nanoscale materials with millimeter-wave photonic crystals

利用毫米波硅光子晶体腔实现纳米级材料的高灵敏度扰动传感，通过低温表征和异质结构实验验证其在极端环境下的应用潜力。