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arXiv 1012.3118cond-mat.str-el
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层状钴酸盐中载流子浓度相关的电子行为理论

Theory of carrier concentration-dependent electronic behavior in layered cobaltates

H. Li, R. T. Clay, S. Mazumdar

摘要:

一个自然的解释,在层状钴酸盐的载流子浓度依赖的电子行为出现在相关电子哈密顿有限的现场和显着的最近邻孔-孔库仑排斥。在空穴密度小于1/3时,近邻排斥使空穴双占有率减小,但在空穴密度较高时,近邻排斥使空穴双占有率增大。我们的结论是有效的单带和三带扩展哈伯德哈密顿量,并揭示了浓度依赖的$e_g^\prime$空穴占据后者。

英文摘要:

A natural explanation for the carrier concentration-dependent electronic behavior in the layered cobaltates emerges within correlated-electron Hamiltonians with finite on-site and significant nearest neighbor hole-hole Coulomb repulsions. The nearest neighbor repulsion decreases hole double-occupancy below hole density 1/3, but increases the same at higher hole densities. Our conclusion is valid for both single-band and three-band extended Hubbard Hamiltonians, and sheds light on concentration-dependent $e_g^\prime$ hole occupancy within the latter.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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