双轴应变SiGe p-MOSFET的本征可靠性改进
Intrinsic Reliability improvement in Biaxially Strained SiGe p-MOSFETs
摘要：
在这封信中，我们不仅展示了性能的改善，而且在30 nm厚的双轴应变SiGe（20%Ge）沟道的可靠性在Si p-MOSFET。与Si沟道相比，应变SiGe沟道允许在传输方向上更大的空穴迁移率（μh），并使电荷流向栅极氧化层。与Si空穴通用迁移率相比，SiGe中的μh增强了40%，Si帽SiGe中的μ h增强了100%。观察到NBTI退化、栅极泄漏和闪烁噪声（1/f）降低约40%，这归因于SiGe中空穴氧化物势垒高度（SiGe）增加4%。Si和SiGe中阈值电压偏移（ΔVT）和噪声增加（ΔSVG）的相似场加速因子（Γ）表明相同的退化机制。
英文摘要：
In this letter we not only show improvement in the performance but also in the reliability of 30nm thick biaxially strained SiGe (20%Ge) channel on Si p-MOSFETs. Compared to Si channel, strained SiGe channel allows larger hole mobility (μh) in the transport direction and alleviates charge flow towards the gate oxide. μh enhancement by 40% in SiGe and 100% in Si-cap SiGe is observed compared to the Si hole universal mobility. A ~40% reduction in NBTI degradation, gate leakage and flicker noise (1/f) is observed which is attributed to a 4% increase in the hole-oxide barrier height (ϕ) in SiGe. Similar field acceleration factor (Γ) for threshold voltage shift (ΔVT) and increase in noise (ΔSVG) in Si and SiGe suggests identical degradation mechanisms.
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