硅中锗纳米晶的发光衰减动力学
Luminescence decay dynamics of germanium nanocrystals in silicon
摘要：
在16 K到室温的温度范围内，研究了镶嵌在晶体硅中的锗纳米晶体的发光衰减动力学。在室温下，特征衰减时间为50纳秒的量级，而在低温下则延伸到微秒范围。衰变主要由非辐射过程，这表明一个典型的热活化能为几毫电子伏。
英文摘要：
The dynamics of the luminescence decay from germanium nanocrystals embedded in crystalline silicon has been studied for temperatures varied between 16 K and room temperature. At room temperature the characteristic decay time is of the order of 50 nanoseconds while it extends into the microsecond range at low temperatures. The decay is dominated by non-radiative processes, which show a typical thermal activation energy of a few meV.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
