As was noted in [3], in order to verify the assumption that the behavior of the polarization dependences of the terahertz emission by hot electrons from $n$-Ge is determined by the type of carrier scattering, it is necessary to perform temperature measurements of this dependence in the range between the temperatures, where the scattering is determined by impurities and by acoustic lattice vibrations, respectively. The given work presents the results of such investigations.
Aluminum-germanium nanowires (NWs) thermal activated solid state reaction is a promising system as very sharp and well defined one dimensional contacts can be created between a metal and a semiconductor, that can become a quantum dot if the size becomes sufficiently small. In the search for high performance devices without variability, it is of high interest to allow deterministic fabrication of nanowire quantum dots, avoiding sample variability and obtaining atomic scale precision on the fabricated dot size. In this paper, we present a reliable fabrication process to produce sub-10 nm Ge quan…
A promising route for the development of opto-elelctronic technology is to use terahertz radiation to modulate the optical properties of semiconductors. Here we demonstrate the dynamical control of photoluminescence (PL) emission in few-layer InSe using picosecond terahertz pulses. We observe a strong PL quenching (up to 50%) after the arrival of the terahertz pulse followed by a reversible recovery of the emission on the time scale of 50ps at T =10K. Microscopic calculations reveal that the origin of the photoluminescence quenching is the terahertz absorption by photo-excited carriers: this l…
We have systematically investigated the spatial and temporal dynamics of crystallization that occurs in the phase-change material Ge2Sb2Te5 upon irradiation with an intense THz pulse. THz pump and optical probe spectroscopy revealed that Zener tunneling induces a nonlinear increase in the conductivity of the crystalline phase. This result indicates that the large electric field associated with the THz pulses causes a nonlinear increase only at the edge of the crystallized area. The electric field concentrating in this area causes a temperature increase via Joule heating, which in turn leads to…
Nonlinear intensity dependence of ratchet currents induced by terahertz laser radiation in bilayer graphene with asymmetric periodic grating gates
University of Regensburg（雷根斯堡大学）；CENTERA Laboratories, Institute of High Pressure Physics, Polish Academy of Sciences（波兰科学院高压物理研究所 CENTERA 实验室）；Ioffe Institute（约费研究所）；National Institute for Materials Science（日本国立材料研究所）
