脉冲形状分析在硅微条探测器中的首次应用
First Application of Pulse-Shape Analysis to Silicon Micro-Strip Detectors
摘要:
将脉冲形状分析(PSA)方法应用于300 μ m硅条间距的双面硅条探测器(DSSD)中。我们提出了一个70 MeV的12C束撞击在一个聚酯薄膜目标的反应粒子的测试测量结果。当从分析中排除DSSD的带间事件时,已经获得了质子和α粒子之间的良好分离,直到3 MeV。
英文摘要:
The method of pulse-shape analysis (PSA) for particle identification (PID) was applied to a double-sided silicon strip detector (DSSD) with a strip pitch of 300 \{mu}m. We present the results of test measurements with particles from the reactions of a 70 MeV 12C beam impinging on a mylar target. Good separation between protons and alpha particles down to 3 MeV has been obtained when excluding the interstrip events of the DSSD from the analysis.
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