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arXiv 1010.0633cond-mat.mes-hallcond-mat.mtrl-sci
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二维共振磁输运中普通区与拓扑绝缘体区的转变

Transition between ordinary and topological insulator regimes in two-dimensional resonant magnetotransport

G. Tkachov, E. M. Hankiewicz

摘要:

在二维情况下,普通态和拓扑绝缘体态之间的跃迁可以用质量项在跃迁点改变符号的质量狄拉克模型来描述。我们从理论上研究如何通过本地化的螺旋边缘状态,这样的过渡体现在共振输运本身。谐振发生在带隙的中间,由于零边缘状态模式,这是由时间反演对称性保护,也当耦合到导电引线。我们得到了共振电导对质量参数和外加磁场的显式依赖关系。该建议可能是实际使用,允许一个确定的轨道g-因子的螺旋边缘状态的二维拓扑绝缘体。

英文摘要:

In the two-dimensional case the transition between ordinary and topological insulator states can be described by a massive Dirac model with the mass term changing its sign at the transition point. We theoretically investigate how such a transition manifests itself in resonant transport via localized helical edge states. The resonance occurs in the middle of the band gap due to a zero edge-state mode which is protected by the time-reversal symmetry, also when coupled to the conducting leads. We obtain the explicit dependence of the resonant conductance on the mass parameter and an external magnetic field. The proposal may be of practical use, allowing one to determine the orbital g-factor of helical edge states in two-dimensional topological insulators.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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