电子密度降低时二维电子气的均匀性分析
Analysis of homogeneity of 2D electron gas at decreasing of electron density
摘要：
本文研究了栅-二维电子气系统的电容与栅压的关系。发现了电容随浓度降低而急剧下降的现象，并讨论了引起电容下降的可能原因，即电子密度分布的不均匀性和二维电子气的串联电阻。对电容和电阻的栅电压依赖性的同时分析表明，在重掺杂的2D系统中，在浓度降低时电容下降的主要作用是2D气体的电阻。研究发现，在低温电导率约为（10^-2-10^-3）e^2/h时，所研究的体系仍保持均匀。
英文摘要：
We investigate the gate voltage dependence of capacitance of a system gate - 2D electron gas (C-Vg). The abrupt drop of capacitance at decreasing concentration was found. The possible reasons of this drop, namely inhomogeneity of electron density distribution and serial resistance of 2D electron gas are discussed. Simultaneous analysis of gate voltage dependences of capacitance and resistance has shown that in heavily doped 2D systems the main role in the drop of capacitance at decreasing concentration plays the resistance of 2D gas. It is found that the investigated systems remains homogeneous down to the low temperature conductivity about (10^-2-10^-3)e^2/h.
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